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MGSF1N03LT3G PDF预览

MGSF1N03LT3G

更新时间: 2024-02-19 18:08:47
品牌 Logo 应用领域
TYSEMI 晶体晶体管开关光电二极管
页数 文件大小 规格书
2页 170K
描述
Power MOSFET 30 V, 2.1 A, Single N−Channel, SOT−23

MGSF1N03LT3G 技术参数

是否无铅: 不含铅生命周期:End Of Life
零件包装代码:SOT-23包装说明:MINIATURE, CASE 318-08, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.1Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):1.6 A最大漏极电流 (ID):1.6 A
最大漏源导通电阻:0.1 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-236JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.42 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

MGSF1N03LT3G 数据手册

 浏览型号MGSF1N03LT3G的Datasheet PDF文件第2页 
Product specification  
MGSF1N03L, MVGSF1N03L  
Power MOSFET  
30 V, 2.1 A, Single NChannel, SOT23  
V
R
TYP  
I MAX  
D
(BR)DSS  
DS(on)  
80 mW @ 10 V  
30 V  
2.1 A  
These miniature surface mount MOSFETs low R  
assure  
125 mW @ 4.5 V  
DS(on)  
minimal power loss and conserve energy, making these devices ideal  
for use in space sensitive power management circuitry. Typical  
applications are dcdc converters and power management in portable  
and batterypowered products such as computers, printers, PCMCIA  
cards, cellular and cordless telephones.  
NChannel  
D
Features  
Low R  
Provides Higher Efficiency and Extends Battery Life  
DS(on)  
G
Miniature SOT23 Surface Mount Package Saves Board Space  
AECQ101 Qualified and PPAP Capable MVGSF1N03LT1  
These Devices are PbFree and are RoHS Compliant  
S
MARKING DIAGRAM/  
PIN ASSIGNMENT  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
DraintoSource Voltage  
Symbol  
Value  
30  
Unit  
V
3
Drain  
V
DSS  
GatetoSource Voltage  
V
20  
V
GS  
N3 M G  
1
SOT23  
CASE 318  
STYLE 21  
Continuous Drain  
Current R  
Steady T = 25°C  
I
2.1  
A
G
A
D
State  
q
JL  
T = 85°C  
A
1.5  
1
2
Power Dissipation  
R
Steady T = 25°C  
P
0.69  
W
A
A
D
Gate  
Source  
State  
q
JL  
N3  
M
G
= Specific Device Code  
= Date Code*  
= PbFree Package  
Continuous Drain  
Current (Note 1)  
Steady T = 25°C  
I
1.6  
1.2  
A
D
State  
T = 85°C  
A
(Note: Microdot may be in either location)  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
Power Dissipation  
(Note 1)  
T = 25°C  
A
P
0.42  
W
D
Pulsed Drain Current  
t = 10 ms  
p
I
6.0  
A
V
DM  
ESD Capability  
(Note 3)  
C = 100 pF,  
RS = 1500 W  
ESD  
125  
ORDERING INFORMATION  
Device  
Package  
Shipping  
Operating Junction and Storage Temperature T , T  
55 to 150  
2.1  
°C  
A
J
STG  
MGSF1N03LT1G  
MGSF1N03LT3G  
SOT23  
PbFree  
3000 / Tape &  
Reel  
Source Current (Body Diode)  
I
S
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 sec)  
T
260  
°C  
L
SOT23  
(PbFree)  
10000 / Tape &  
Reel  
THERMAL RESISTANCE RATINGS  
MVGSF1N03LT1G  
SOT23  
(PbFree)  
3000 / Tape &  
Reel  
Parameter  
Symbol  
Max  
180  
300  
250  
400  
Unit  
JunctiontoFoot Steady State  
R
°C/W  
q
JL  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
JunctiontoAmbient Steady State (Note 1)  
JunctiontoAmbient t < 10 s (Note 1)  
JunctiontoAmbient Steady State (Note 2)  
R
q
JA  
R
q
JA  
R
q
JA  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
2
1. Surfacemounted on FR4 board using 650 mm , 1 oz. Cu pad size.  
2
2. Surfacemounted on FR4 board using 50 mm , 1 oz. Cu pad size.  
3. ESD Rating Information: HBM Class 0.  
http://www.twtysemi.com  
sales@twtysemi.com  
1 of 2  
 

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