5秒后页面跳转
捷配首页

Datasheet > MGSF1N03LT3G
MGSF1N03LT3G PDF预览

MGSF1N03LT3G

更新时间： 2024-11-21 12:30:59
品牌 Logo 应用领域
TYSEMI 晶体晶体管开关光电二极管
页数 文件大小 规格书
2页 170K
描述
Power MOSFET 30 V, 2.1 A, Single N−Channel, SOT−23

阅读下载

中文翻译

获取价格

MGSF1N03LT3G 数据手册

 浏览型号MGSF1N03LT3G的Datasheet PDF文件第2页 
Product specification  
MGSF1N03L, MVGSF1N03L  
Power MOSFET  
30 V, 2.1 A, Single N−Channel, SOT−23  
V
R
TYP  
I MAX  
D
(BR)DSS  
DS(on)  
80 mW @ 10 V  
30 V  
2.1 A  
These miniature surface mount MOSFETs low R  
assure  
125 mW @ 4.5 V  
DS(on)  
minimal power loss and conserve energy, making these devices ideal  
for use in space sensitive power management circuitry. Typical  
applications are dc−dc converters and power management in portable  
and battery−powered products such as computers, printers, PCMCIA  
cards, cellular and cordless telephones.  
N−Channel  
D
Features  
• Low R  
Provides Higher Efficiency and Extends Battery Life  
DS(on)  
G
• Miniature SOT−23 Surface Mount Package Saves Board Space  
• AEC−Q101 Qualified and PPAP Capable − MVGSF1N03LT1  
• These Devices are Pb−Free and are RoHS Compliant  
S
MARKING DIAGRAM/  
PIN ASSIGNMENT  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
30  
Unit  
V
3
Drain  
V
DSS  
Gate−to−Source Voltage  
V
20  
V
GS  
N3 M G  
1
SOT−23  
CASE 318  
STYLE 21  
Continuous Drain  
Current R  
Steady T = 25°C  
I
2.1  
A
G
A
D
State  
q
JL  
T = 85°C  
A
1.5  
1
2
Power Dissipation  
R
Steady T = 25°C  
P
0.69  
W
A
A
D
Gate  
Source  
State  
q
JL  
N3  
M
G
= Specific Device Code  
= Date Code*  
= Pb−Free Package  
Continuous Drain  
Current (Note 1)  
Steady T = 25°C  
I
1.6  
1.2  
A
D
State  
T = 85°C  
A
(Note: Microdot may be in either location)  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
Power Dissipation  
(Note 1)  
T = 25°C  
A
P
0.42  
W
D
Pulsed Drain Current  
t = 10 ms  
p
I
6.0  
A
V
DM  
ESD Capability  
(Note 3)  
C = 100 pF,  
RS = 1500 W  
ESD  
125  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
Operating Junction and Storage Temperature T , T  
−55 to 150  
2.1  
°C  
A
J
STG  
MGSF1N03LT1G  
MGSF1N03LT3G  
SOT−23  
Pb−Free  
3000 / Tape &  
Reel  
Source Current (Body Diode)  
I
S
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 sec)  
T
260  
°C  
L
SOT−23  
(Pb−Free)  
10000 / Tape &  
Reel  
THERMAL RESISTANCE RATINGS  
MVGSF1N03LT1G  
SOT−23  
(Pb−Free)  
3000 / Tape &  
Reel  
Parameter  
Symbol  
Max  
180  
300  
250  
400  
Unit  
Junction−to−Foot − Steady State  
R
°C/W  
q
JL  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Junction−to−Ambient − Steady State (Note 1)  
Junction−to−Ambient − t < 10 s (Note 1)  
Junction−to−Ambient − Steady State (Note 2)  
R
q
JA  
R
q
JA  
R
q
JA  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
2
1. Surface−mounted on FR4 board using 650 mm , 1 oz. Cu pad size.  
2
2. Surface−mounted on FR4 board using 50 mm , 1 oz. Cu pad size.  
3. ESD Rating Information: HBM Class 0.  
http://www.twtysemi.com  
sales@twtysemi.com  
1 of 2  
 
12

中文翻译

下载PDF

与MGSF1N03LT3G相关器件

型号 品牌 获取价格 描述 数据表
MGSF1P02 WEITRON

获取价格

 		Power MOSFET P-Channel
MGSF1P02ELT1 ONSEMI

获取价格

 		Power MOSFET 750 mAmps, 20 Volts P?Channel SOT?23
MGSF1P02ELT3 ONSEMI

获取价格

 		Power MOSFET 750 mAmps, 20 Volts P?Channel SOT?23
MGSF1P02LT1 ONSEMI

获取价格

 		Power MOSFET 750 mAmps, 20 Volts
MGSF1P02LT1 MOTOROLA

获取价格

 		P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
MGSF1P02LT1G ONSEMI

获取价格

 		TRANSISTOR 750 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, LEAD FREE, CASE 318-
MGSF1P02LT3 MOTOROLA

获取价格

 		P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
MGSF1P02LT3 ONSEMI

获取价格

 		Power MOSFET 750 mAmps, 20 Volts
MGSF1P02LT3G ONSEMI

获取价格

 		暂无描述
MGSF2N02E ONSEMI

获取价格

 		2.8 Amps, 20 Volts, N−Channel SOT−23

与MGSF1N03LT3G相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证