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MGSF1P02LT3G PDF预览

MGSF1P02LT3G

更新时间: 2024-11-21 13:11:27
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管开关光电二极管
页数 文件大小 规格书
8页 85K
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MGSF1P02LT3G 数据手册

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MGSF1P02LT1  
Preferred Device  
Power MOSFET  
750 mAmps, 20 Volts  
P–Channel SOT–23  
These miniature surface mount MOSFETs low R  
assure  
DS(on)  
minimal power loss and conserve energy, making these devices ideal  
for use in space sensitive power management circuitry. Typical  
applications are dc–dc converters and power management in portable  
and battery–powered products such as computers, printers, PCMCIA  
cards, cellular and cordless telephones.  
http://onsemi.com  
750 mAMPS  
20 VOLTS  
Low R  
DS(on)  
Provides Higher Efficiency and Extends Battery Life  
R
= 350 mW  
DS(on)  
Miniature SOT–23 Surface Mount Package Saves Board Space  
P–Channel  
3
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Drain–to–Source Voltage  
Gate–to–Source Voltage – Continuous  
Drain Current  
Symbol  
V
Value  
20  
Unit  
Vdc  
Vdc  
mA  
DSS  
V
GS  
± 20  
1
– Continuous @ T = 25°C  
I
750  
2000  
A
D
– Pulsed Drain Current (t 10 µs)  
I
p
DM  
2
Total Power Dissipation @ T = 25°C  
P
D
400  
mW  
A
Operating and Storage Temperature  
Range  
T , T  
– 55 to  
150  
°C  
J
stg  
MARKING  
DIAGRAM  
Thermal Resistance – Junction–to–Ambient  
R
300  
260  
°C/W  
°C  
θJA  
3
Maximum Lead Temperature for Soldering  
Purposes, 1/8from case for 10  
seconds  
T
L
SOT–23  
CASE 318  
STYLE 21  
PC  
W
1
2
W
= Work Week  
PIN ASSIGNMENT  
Drain  
3
1
Gate  
2
Source  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MGSF1P02LT1  
MGSF1P02LT3  
SOT–23  
3000 Tape & Reel  
SOT–23 10,000 Tape & Reel  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
November, 2000 – Rev. 3  
MGSF1P02LT1/D  

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