Datasheet > MGSF2N02ELT3G

MGSF2N02ELT3G

更新时间： 2024-09-21 12:03:47

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关脉冲光电二极管
页数	文件大小	规格书
2页	183K
描述
2.8 Amps, 20 Volts, NâChannel SOTâ23 PbâFree Packages are Available

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MGSF2N02ELT3G 数据手册

Product specification

MGSF2N02EL

Power MOSFET

2.8 A, 20 V

_DS(on)= 85 mW (max)

2.8 Amps, 20 Volts, N−Channel SOT−23

These miniature surface mount MOSFETs low R

minimal power loss and conserve energy, making these devices ideal

for use in space sensitive power management circuitry.

assure

DS(on)

N−Channel

Features

• Pb−Free Packages are Available

• Low R

Provides Higher Efficiency and Extends Battery Life

DS(on)

• Miniature SOT−23 Surface Mount Package Saves Board Space

• I Specified at Elevated Temperature

DSS

Applications

• DC−DC Converters

MARKING

DIAGRAM

• Power Management in Portable and Battery Powered Products, ie:

Computers, Printers, PCMCIA Cards, Cellular and Cordless

Telephones

SOT−23

NT M

CASE 318

STYLE 21

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Drain−to−Source Voltage

Gate−to−Source Voltage − Continuous

Drain Current

Symbol

Value

Unit

Vdc

DSS

± 8.0

= Device Code

= Date Code

− Continuous @ T = 25°C

2.8

5.0

− Single Pulse (t = 10 ms)

PIN ASSIGNMENT

Total Power Dissipation @ T = 25°C

1.25

Operating and Storage Temperature

Range

T , T

− 55 to

150

°C

Drain

stg

Thermal Resistance

°C/W

Junction−to−Ambient (Note 1)

Thermal Resistance

100

300

260

Junction−to−Ambient (Note 2)

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

°C

Gate

Source

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

1. 1” Pad, t < 10 sec.

2. Min pad, steady state.

Preferred devices are recommended choices for future use

and best overall value.

http://www.twtysemi.com

sales@twtysemi.com

1 of 2

中文翻译

下载PDF

与MGSF2N02ELT3G相关器件

型号	品牌	获取价格	描述	数据表
MGSF2P02HD	ONSEMI	获取价格	Power MOSFET 2 Amps, 20 Volts
MGSF2P02HD	MOTOROLA	获取价格	1.3A, 20V, P-CHANNEL, Si, POWER, MOSFET, PLASTIC, TSOP-6
MGSF2P02HDR2	MOTOROLA	获取价格	1.3A, 20V, 0.175ohm, P-CHANNEL, Si, POWER, MOSFET, PLASTIC, TSOP-6
MGSF2P02HDT1	ONSEMI	获取价格	Power MOSFET 2 Amps, 20 Volts
MGSF2P02HDT3	ONSEMI	获取价格	Power MOSFET 2 Amps, 20 Volts
MGSF3441V	ONSEMI	获取价格	3300mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, TSOP-6
MGSF3441VT1	MOTOROLA	获取价格	Low rDS(on) Small-signal MOSFETs TMOS Single P=Channel Field Effect Transistors
MGSF3441VTD	MOTOROLA	获取价格	Low rDS(on) Small-signal MOSFETs TMOS Single P=Channel Field Effect Transistors
MGSF3441X	ONSEMI	获取价格	1500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, TSOP-6
MGSF3441XT1	MOTOROLA	获取价格	Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors

与MGSF2N02ELT3G相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

65
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

62
SL74HC10N：高性能三输入与非门解析
2024-09-03

134
AIC1781A 电池充电控制器深度解析
2024-09-03

130

产品中心

服务支持

精选活动

关于我们

帮助中心

MGSF2N02ELT3G

MGSF2N02ELT3G 数据手册

与MGSF2N02ELT3G相关器件

与MGSF2N02ELT3G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MGSF2N02ELT3G

MGSF2N02ELT3G 数据手册

与MGSF2N02ELT3G相关器件

与MGSF2N02ELT3G相关文章

您还可以找

您在本页遇到什么问题？