Datasheet > 晶体管 > 小信号场效应晶体管> MGSF2P02HDT1

MGSF2P02HDT1

更新时间： 2024-09-20 21:53:51

品牌	Logo	应用领域
安森美 - ONSEMI		晶体小信号场效应晶体管开关光电二极管
页数	文件大小	规格书
8页	110K
描述
Power MOSFET 2 Amps, 20 Volts

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MGSF2P02HDT1 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	TSOP	包装说明：	MINIATURE CASE 318G-02, TSOP-6
针数：	6	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	风险等级：	5.87
Is Samacsys：	N	其他特性：	LOGIC LEVEL COMPATIBLE
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	20 V
最大漏极电流 (Abs) (ID)：	1.3 A	最大漏极电流 (ID)：	1.3 A
最大漏源导通电阻：	0.175 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G6	JESD-609代码：	e0
湿度敏感等级：	1	元件数量：	1
端子数量：	6	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	0.21 W	认证状态：	Not Qualified
子类别：	Other Transistors	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

MGSF2P02HDT1 数据手册

MGSF2P02HD

Power MOSFET

2 Amps, 20 Volts

P−Channel TSOP−6

This device represents a series of Power MOSFETs which are

capable of withstanding high energy in the avalanche and

commutation modes and the drain−to−source diode has a very low

reverse recovery time. These devices are designed for use in low

voltage, high speed switching applications where power efficiency is

important. Typical applications are dc−dc converters, and power

management in portable and battery powered products such as

computers, printers, cellular and cordless phones. They can also be

used for low voltage motor controls in mass storage products such as

disk drives and tape drives. The avalanche energy is specified to

eliminate the guesswork in designs where inductive loads are switched

and offer additional safety margin against unexpected voltage

transients.

http://onsemi.com

TYP

I MAX

DSS

DS(ON)

20 V

175 mΩ

2.0 A

P−Channel

1 2 5 6

Features

• Miniature TSOP−6 Surface Mount Package − Saves Board Space

• Low Profile for Thin Applications such as PCMCIA Cards

• Very Low R

Provides Higher Efficiency and Expands

DS(on)

MARKING

DIAGRAM

Battery Life

• Logic Level Gate Drive − Can Be Driven by Logic ICs

• Diode is Characterized for Use in Bridge Circuits

• Diode Exhibits High Speed, with Soft Recovery

TSOP−6

CASE 318G

STYLE 1

• I

Specified at Elevated Temperatures

DSS

• Avalanche Energy Specified

• Package Mounting Information Provided

= Device Code

= Work Week

PIN ASSIGNMENT

Drain Drain Source

Drain Drain Gate

ORDERING INFORMATION

†

Device

Package

Shipping

MGSF2P02HDT1 TSOP−6

3000 Tape & Reel

MGSF2P02HDT3 TSOP−6 10,000 Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

April, 2004 − Rev. 2

MGSF2P02HD/D

12 3 4 5 6 7 8

中文翻译

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与MGSF2P02HDT1相关器件

型号	品牌	获取价格	描述	数据表
MGSF2P02HDT3	ONSEMI	获取价格	Power MOSFET 2 Amps, 20 Volts
MGSF3441V	ONSEMI	获取价格	3300mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, TSOP-6
MGSF3441VT1	MOTOROLA	获取价格	Low rDS(on) Small-signal MOSFETs TMOS Single P=Channel Field Effect Transistors
MGSF3441VTD	MOTOROLA	获取价格	Low rDS(on) Small-signal MOSFETs TMOS Single P=Channel Field Effect Transistors
MGSF3441X	ONSEMI	获取价格	1500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, TSOP-6
MGSF3441XT1	MOTOROLA	获取价格	Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
MGSF3441XT3	MOTOROLA	获取价格	Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
MGSF3442VT1	MOTOROLA	获取价格	N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
MGSF3442VT3	MOTOROLA	获取价格	Power Field-Effect Transistor, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semicon
MGSF3442X	ONSEMI	获取价格	1700mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, TSOP-6

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