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MGSF2P02HDT1 PDF预览

MGSF2P02HDT1

更新时间： 2024-11-24 21:53:51
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
8页 110K
描述
Power MOSFET 2 Amps, 20 Volts

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中文翻译

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MGSF2P02HDT1 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TSOP包装说明：MINIATURE CASE 318G-02, TSOP-6
针数：6Reach Compliance Code：not_compliant
ECCN代码：EAR99风险等级：5.87
Is Samacsys：N其他特性：LOGIC LEVEL COMPATIBLE
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：20 V
最大漏极电流 (Abs) (ID)：1.3 A最大漏极电流 (ID)：1.3 A
最大漏源导通电阻：0.175 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G6JESD-609代码：e0
湿度敏感等级：1元件数量：1
端子数量：6工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：0.21 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

MGSF2P02HDT1 数据手册

 浏览型号MGSF2P02HDT1的Datasheet PDF文件第2页浏览型号MGSF2P02HDT1的Datasheet PDF文件第3页浏览型号MGSF2P02HDT1的Datasheet PDF文件第4页浏览型号MGSF2P02HDT1的Datasheet PDF文件第5页浏览型号MGSF2P02HDT1的Datasheet PDF文件第6页浏览型号MGSF2P02HDT1的Datasheet PDF文件第7页 
MGSF2P02HD  
Power MOSFET  
2 Amps, 20 Volts  
P−Channel TSOP−6  
This device represents a series of Power MOSFETs which are  
capable of withstanding high energy in the avalanche and  
commutation modes and the drain−to−source diode has a very low  
reverse recovery time. These devices are designed for use in low  
voltage, high speed switching applications where power efficiency is  
important. Typical applications are dc−dc converters, and power  
management in portable and battery powered products such as  
computers, printers, cellular and cordless phones. They can also be  
used for low voltage motor controls in mass storage products such as  
disk drives and tape drives. The avalanche energy is specified to  
eliminate the guesswork in designs where inductive loads are switched  
and offer additional safety margin against unexpected voltage  
transients.  
http://onsemi.com  
V
R
TYP  
I MAX  
D
DSS  
DS(ON)  
20 V  
175 mΩ  
2.0 A  
P−Channel  
1 2 5 6  
3
Features  
• Miniature TSOP−6 Surface Mount Package − Saves Board Space  
• Low Profile for Thin Applications such as PCMCIA Cards  
4
• Very Low R  
Provides Higher Efficiency and Expands  
DS(on)  
MARKING  
DIAGRAM  
Battery Life  
• Logic Level Gate Drive − Can Be Driven by Logic ICs  
• Diode is Characterized for Use in Bridge Circuits  
• Diode Exhibits High Speed, with Soft Recovery  
1
3V  
W
TSOP−6  
CASE 318G  
STYLE 1  
• I  
Specified at Elevated Temperatures  
DSS  
• Avalanche Energy Specified  
• Package Mounting Information Provided  
3V  
W
= Device Code  
= Work Week  
PIN ASSIGNMENT  
Drain Drain Source  
4
6
5
1
2
3
Drain Drain Gate  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
MGSF2P02HDT1 TSOP−6  
3000 Tape & Reel  
MGSF2P02HDT3 TSOP−6 10,000 Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
April, 2004 − Rev. 2  
MGSF2P02HD/D  
12345678

中文翻译

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