生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-G6 |
Reach Compliance Code: | unknown | HTS代码: | 8541.21.00.95 |
风险等级: | 5.31 | Is Samacsys: | N |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 1.75 A | 最大漏极电流 (ID): | 1.75 A |
最大漏源导通电阻: | 0.065 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G6 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 6 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.95 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MGSF3454XT3 | MOTOROLA |
获取价格 |
Small Signal Field-Effect Transistor, 1.75A I(D), 30V, 1-Element, N-Channel, Silicon, Meta | |
MGSF3455VT1 | MOTOROLA |
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P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET | |
MGSF3455VT3 | MOTOROLA |
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3.5A, 30V, 0.1ohm, P-CHANNEL, Si, POWER, MOSFET, TSOP-6 | |
MGSF3455VT3 | ONSEMI |
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3.5A, 30V, 0.1ohm, P-CHANNEL, Si, POWER, MOSFET, PLASTIC, TSOP-6 | |
MGSF3455X | ONSEMI |
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1450mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, TSOP-6 | |
MGSF3455XT1 | MOTOROLA |
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P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET | |
MGSF3455XT3 | MOTOROLA |
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Small Signal Field-Effect Transistor, 1.45A I(D), 30V, 1-Element, P-Channel, Silicon, Meta | |
MGST | TE |
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GRID HIGH-PERFORMANCE RELAYS | |
MG-ST01 | ETC |
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SkyTraq GPS Module | |
MGT | MERITEK |
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Gas Discharge Tube |