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MGSF3454XT1 PDF预览

MGSF3454XT1

更新时间: 2024-11-20 22:17:03
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
6页 141K
描述
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

MGSF3454XT1 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code:unknownHTS代码:8541.21.00.95
风险等级:5.31Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):1.75 A最大漏极电流 (ID):1.75 A
最大漏源导通电阻:0.065 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G6JESD-609代码:e0
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.95 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

MGSF3454XT1 数据手册

 浏览型号MGSF3454XT1的Datasheet PDF文件第2页浏览型号MGSF3454XT1的Datasheet PDF文件第3页浏览型号MGSF3454XT1的Datasheet PDF文件第4页浏览型号MGSF3454XT1的Datasheet PDF文件第5页浏览型号MGSF3454XT1的Datasheet PDF文件第6页 
Order this document  
by MGSF3454XT1/D  
SEMICONDUCTOR TECHNICAL DATA  
Motorola Preferred Device  
N–CHANNEL  
ENHANCEMENT–MODE  
TMOS MOSFET  
r
= 50 m(TYP)  
DS(on)  
Part of the GreenLine Portfolio of devices with energy–  
conserving traits.  
D
D
S
These miniature surface mount MOSFETs utilize Motorola’s High  
Cell Density, HDTMOS process. Low r  
assures minimal  
DS(on)  
1 2 5 6  
D
power loss and conserves energy, making this device ideal for use  
in small power management circuitry. Typical applications are  
dc–dc converters, power management in portable and battery–  
powered products such as computers, printers, PCMCIA cards,  
cellular and cordless telephones.  
DRAIN  
D
G
CASE 318G–02, Style 1  
TSOP 6 PLASTIC  
3
Low r Provides Higher Efficiency and Extends Battery Life  
DS(on)  
Miniature TSOP 6 Surface Mount Package Saves Board Space  
GATE  
SOURCE  
4
Visit our Web Site at http://www.mot–sps.com/ospd  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Drain–to–Source Voltage  
Symbol  
Value  
30  
Unit  
Vdc  
Vdc  
A
V
DSS  
Gate–to–Source Voltage — Continuous  
V
GS  
± 20  
Drain Current — Continuous @ T = 25°C  
I
D
1.75  
20  
A
Drain Current — Pulsed Drain Current (t 10 µs)  
I
p
DM  
Total Power Dissipation @ T = 25°C  
P
950  
– 55 to 150  
250  
mW  
°C  
A
D
Operating and Storage Temperature Range  
Thermal Resistance — Junction–to–Ambient  
Maximum Lead Temperature for Soldering Purposes, for 10 seconds  
Device Marking = 3G  
T , T  
J
stg  
R
°C/W  
°C  
θJA  
T
260  
L
ORDERING INFORMATION  
Device  
Reel Size  
Tape Width  
Quantity  
MGSF3454XT1  
MGSF3454XT3  
7″  
8 mm embossed tape  
8 mm embossed tape  
3000  
13″  
10,000  
GreenLine is a trademark of Motorola, Inc.  
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.  
Thermal Clad is a trademark of the Bergquist Company.  
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1997

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