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MGSF3441VTD PDF预览

MGSF3441VTD

更新时间： 2024-02-22 06:52:09
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管场效应晶体管
页数 文件大小 规格书
7页 120K
描述
Low rDS(on) Small-signal MOSFETs TMOS Single P=Channel Field Effect Transistors

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中文翻译

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MGSF3441VTD 技术参数

生命周期：Obsolete零件包装代码：TSOP
包装说明：SMALL OUTLINE, R-PDSO-G6针数：6
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.95风险等级：5.68
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：20 V
最大漏极电流 (ID)：1.5 A最大漏源导通电阻：0.1 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G6
元件数量：1端子数量：6
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：P-CHANNEL认证状态：Not Qualified
表面贴装：YES端子形式：GULL WING
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

MGSF3441VTD 数据手册

 浏览型号MGSF3441VTD的Datasheet PDF文件第2页浏览型号MGSF3441VTD的Datasheet PDF文件第3页浏览型号MGSF3441VTD的Datasheet PDF文件第4页浏览型号MGSF3441VTD的Datasheet PDF文件第5页浏览型号MGSF3441VTD的Datasheet PDF文件第6页浏览型号MGSF3441VTD的Datasheet PDF文件第7页 
Order this document  
by MGSF3441VT1/D  
SEMICONDUCTOR TECHNICAL DATA  
Motorola Preferred Device  
P–CHANNEL  
ENHANCEMENT–MODE  
TMOS MOSFET  
r
= 78 mΩ (TYP)  
DS(on)  
Part of the GreenLine Portfolio of devices with energy–  
conserving traits.  
D
D
S
These miniature surface mount MOSFETs utilize Motorola’s High  
Cell Density, HDTMOS process. Low r  
assures minimal  
DS(on)  
1 2 5 6  
D
power loss and conserves energy, making this device ideal for use  
in small power management circuitry. Typical applications are  
dc–dc converters, power management in portable and battery–  
powered products such as computers, printers, PCMCIA cards,  
cellular and cordless telephones.  
DRAIN  
D
G
CASE 318G–02, Style 1  
TSOP 6 PLASTIC  
3
•
•
•
Low r Provides Higher Efficiency and Extends Battery Life  
DS(on)  
Miniature TSOP 6 Surface Mount Package Saves Board Space  
GATE  
SOURCE  
4
Visit our Web Site at http://www.mot–sps.com/ospd  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Drain–to–Source Voltage  
Symbol  
Value  
20  
Unit  
Vdc  
Vdc  
A
V
DSS  
Gate–to–Source Voltage — Continuous  
V
GS  
± 8.0  
Drain Current — Continuous @ T = 25°C  
I
D
3.3  
20  
A
Drain Current — Pulsed Drain Current (t ≤ 10 µs)  
I
p
DM  
Total Power Dissipation @ T = 25°C Mounted on FR4 t  
5 sec  
P
2.0  
– 55 to 150  
128  
W
°C  
A
D
Operating and Storage Temperature Range  
Thermal Resistance — Junction–to–Ambient  
T , T  
J
stg  
R
°C/W  
°C  
θJA  
Maximum Lead Temperature for Soldering Purposes, for 10 seconds  
T
260  
L
ORDERING INFORMATION  
Device  
Reel Size  
Tape Width  
Quantity  
MGSF3441VT1  
MGSF3441VT3  
7″  
8 mm embossed tape  
8 mm embossed tape  
3000  
13″  
10,000  
GreenLine is a trademark of Motorola, Inc.  
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.  
Thermal Clad is a trademark of the Bergquist Company.  
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1997
1234567

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MGSF3442VT3 MOTOROLA

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MGSF3442X ONSEMI

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 		1700mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, TSOP-6
MGSF3442XT1 MOTOROLA

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 		N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
MGSF3442XT1 ONSEMI

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 		1700mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, CASE 318G-02, TSOP-6
MGSF3442XT3 ONSEMI

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 		1700mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, CASE 318G-02, TSOP-6
MGSF3442XT3 MOTOROLA

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 		1700mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

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