Datasheet > MGSF2N02EL

MGSF2N02EL

更新时间： 2024-01-03 17:23:05

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	58K
描述
2.8 Amps, 20 Volts, N−Channel SOT−23

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中文翻译

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数据手册

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MGSF2N02EL 数据手册

MGSF2N02EL

Preferred Device

Power MOSFET

2.8 Amps, 20 Volts, N−Channel SOT−23

These miniature surface mount MOSFETs low R

assure

DS(on)

minimal power loss and conserve energy, making these devices ideal

for use in space sensitive power management circuitry.

http://onsemi.com

Features

2.8 A, 20 V

R_DS(on)= 85 mW (max)

• Pb−Free Packages are Available

• Low R

Provides Higher Efficiency and Extends Battery Life

DS(on)

• Miniature SOT−23 Surface Mount Package Saves Board Space

• I Specified at Elevated Temperature

N−Channel

DSS

Applications

• DC−DC Converters

• Power Management in Portable and Battery Powered Products, ie:

Computers, Printers, PCMCIA Cards, Cellular and Cordless

Telephones

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Drain−to−Source Voltage

Gate−to−Source Voltage − Continuous

Drain Current

Symbol

Value

Unit

Vdc

MARKING

DIAGRAM

DSS

± 8.0

− Continuous @ T = 25°C

2.8

5.0

SOT−23

CASE 318

STYLE 21

− Single Pulse (t = 10 ms)

NT M

Total Power Dissipation @ T = 25°C

1.25

Operating and Storage Temperature

Range

T , T

− 55 to

150

°C

stg

Thermal Resistance

Junction−to−Ambient (Note 1)

Thermal Resistance

°C/W

= Device Code

= Date Code

100

300

260

Junction−to−Ambient (Note 2)

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

°C

PIN ASSIGNMENT

Drain

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

1. 1” Pad, t < 10 sec.

2. Min pad, steady state.

Gate

Source

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

This document contains information on a new product. Specifications and information

herein are subject to change without notice.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

August, 2004 − Rev. 2

MGSF2N02EL/D

12 3 4 5 6

中文翻译

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与MGSF2N02EL相关器件

型号	品牌	获取价格	描述	数据表
MGSF2N02ELT1	TYSEMI	获取价格	2.8 Amps, 20 Volts, NâChannel SOTâ23 Pbâ
MGSF2N02ELT1	ONSEMI	获取价格	2.8 Amps, 20 Volts, N−Channel SOT−23
MGSF2N02ELT1G	ONSEMI	获取价格	2.8 Amps, 20 Volts, N−Channel SOT−23
MGSF2N02ELT1G	TYSEMI	获取价格	2.8 Amps, 20 Volts, NâChannel SOTâ23 Pbâ
MGSF2N02ELT3	TYSEMI	获取价格	2.8 Amps, 20 Volts, NâChannel SOTâ23 Pbâ
MGSF2N02ELT3	ONSEMI	获取价格	2.8 Amps, 20 Volts, N−Channel SOT−23
MGSF2N02ELT3G	ONSEMI	获取价格	2.8 Amps, 20 Volts, N−Channel SOT−23
MGSF2N02ELT3G	TYSEMI	获取价格	2.8 Amps, 20 Volts, NâChannel SOTâ23 Pbâ
MGSF2P02HD	ONSEMI	获取价格	Power MOSFET 2 Amps, 20 Volts
MGSF2P02HD	MOTOROLA	获取价格	1.3A, 20V, P-CHANNEL, Si, POWER, MOSFET, PLASTIC, TSOP-6

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