Datasheet > MGSF1N02LT1_05

MGSF1N02LT1_05

更新时间： 2024-11-21 03:35:27

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	63K
描述
Power MOSFET 750 mAmps, 20 Volts N-Channel SOT-23

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中文翻译

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MGSF1N02LT1_05 数据手册

MGSF1N02LT1

Preferred Device

Power MOSFET

750 mAmps, 20 Volts

N−Channel SOT−23

These miniature surface mount MOSFETs low R

assure

DS(on)

http://onsemi.com

minimal power loss and conserve energy, making these devices ideal

for use in space sensitive power management circuitry. Typical

applications are dc−dc converters and power management in portable

and battery−powered products such as computers, printers, PCMCIA

cards, cellular and cordless telephones.

750 mAMPS, 20 VOLTS

R_DS(on)= 90 mW

N−Channel

Features

• Low R

Provides Higher Efficiency and Extends Battery Life

DS(on)

• Miniature SOT−23 Surface Mount Package Saves Board Space

• Pb−Free Packages are Available

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Drain−to−Source Voltage

Gate−to−Source Voltage − Continuous

Drain Current

Symbol

Value

Unit

Vdc

DSS

MARKING DIAGRAM/

PIN ASSIGNMENT

750

2000

− Continuous @ T = 25°C

Drain

− Pulsed Drain Current (t ≤ 10 ms)

Total Power Dissipation @ T = 25°C

400

− 55 to 150

300

°C

SOT−23

CASE 318

STYLE 21

N2 M G

Operating and Storage Temperature Range T , T

stg

Thermal Resistance, Junction−to−Ambient

°C/W

°C

Gate

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

260

Source

= Device Code

= Date Code*

= Pb−Free Package

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

(Note: Microdot may be in either location)

*Date Code orientation and overbar may vary

depending upon manufacturing location.

ORDERING INFORMATION

†

Device

Package

Shipping

MGSF1N02LT1

SOT−23

3000/Tape & Reel

MGSF1N02LT1G SOT−23

(Pb−Free)

MGSF1N02LT3

SOT−23 10,000/Tape & Reel

MGSF1N02LT3G SOT−23 10,000/Tape & Reel

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Preferred devices are recommended choices for future use

and best overall value.

Publication Order Number:

December, 2005 − Rev. 4

MGSF1N02LT1/D

12 3 4

中文翻译

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与MGSF1N02LT1_05相关器件

型号	品牌	获取价格	描述	数据表
MGSF1N02LT1G	ONSEMI	获取价格	Power MOSFET 750 mAmps, 20 Volts N-Channel SOT-23
MGSF1N02LT3	MOTOROLA	获取价格	N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
MGSF1N02LT3	ONSEMI	获取价格	Power MOSFET 750 mAmps, 20 Volts
MGSF1N02LT3	TYSEMI	获取价格	Power MOSFET 750 mAmps, 20 Volts NâChannel
MGSF1N02LT3G	ONSEMI	获取价格	Power MOSFET 750 mAmps, 20 Volts N-Channel SOT-23
MGSF1N03L	TYSEMI	获取价格	Power MOSFET 30 V, 2.1 A, Single NâChannel,
MGSF1N03L	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时
MGSF1N03LT1	ONSEMI	获取价格	Power MOSFET 30 V, 2.1 A, Single N−Channel, SOT−23
MGSF1N03LT1	MOTOROLA	获取价格	N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
MGSF1N03LT1G	TYSEMI	获取价格	Power MOSFET 30 V, 2.1 A, Single NâChannel,

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