Datasheet > MGSF1N03L

MGSF1N03L

更新时间： 2024-11-22 17:15:31

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
6页	421K
描述
种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:2.1A;Vgs(th)(V):±20;漏源导通电阻:10mΩ@10V;漏源导通电阻:14.5mΩ@4.5V

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MGSF1N03L 数据手册

UMW

MGSF1N03L

30V N-Channel MOSFET

Description

These miniature surface mount MOSFETs

low R

assure minimal power loss and

DS(on)

conserve energy, making these devices

ideal for use in space sensitive power

management circuitry. Typical applications

−

are dc dc converters and power management

in portable and battery−powered products such

as computers, printers, PCMCIA cards, cellular

and cordless telephones.

Features

•

VDS (V) = 30V

(V_GS= 10V)

•

ID = 2.1A

RDS(ON)＜

80m

Ω(V

=10V)

125m

Ω(V

•

=4.5V)

MAXIMUM RATINGS (T = 25 C unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain − to − Source Voltage

V _DSS

Gate − to − Source Voltage

V _GS

± 20

2.1

Continuous Drain

Current R

Steady

State

I_D

T_A= 25 °C

T_A= 85 °C

T_A= 25 °C

1.5

Power Dissipation

R _q_JL

Steady

State

P _D

0.69

Continuous Drain

Current (Note 1)

Steady

State

I_D

T_A= 25 °C

T_A= 85 °C

T_A= 25 °C

1.6

1.2

Power Dissipation

(Note 1)

P _D

0.42

Pulsed Drain Current

I_DM

6.0

t_p= 10 m s

ESD Capability

(Note 3)

C = 100 pF,

RS = 1500

ESD

125

Operating Junction and Storage Temperature

Source Current (Body Diode)

T_J, T_STG

−55 to 150

2.1

°C

I_S

Lead Temperature for Soldering Purposes

(1/8” from case for 10 sec)

T _L

260

°C

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6

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