Datasheet > MGSF1N03LT3

MGSF1N03LT3

更新时间： 2024-11-20 22:10:07

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		/
页数	文件大小	规格书
6页	186K
描述
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

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MGSF1N03LT3 数据手册

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SEMICONDUCTOR TECHNICAL DATA

Motorola Preferred Device

N–CHANNEL

ENHANCEMENT–MODE

TMOS MOSFET

Part of the GreenLine Portfolio of devices with energy–

conserving traits.

These miniature surface mount MOSFETs utilize Motorola’s

High Cell Density, HDTMOS process. Low r

assures

DS(on)

3 DRAIN

minimal power loss and conserves energy, making this device

ideal for use in space sensitive power management circuitry.

Typical applications are dc–dc converters and power manage-

ment in portable and battery–powered products such as

computers, printers, PCMCIA cards, cellular and cordless

telephones.

CASE 318–08, Style 21

SOT–23 (TO–236AB)

GATE

•

Low r

Life

Provides Higher Efficiency and Extends Battery

DS(on)

2 SOURCE

•

Miniature SOT–23 Surface Mount Package Saves Board

Space

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Drain–to–Source Voltage

Symbol

Value

Unit

Vdc

DSS

Gate–to–Source Voltage — Continuous

± 20

Drain Current — Continuous @ T = 25°C

750

2000

Drain Current — Pulsed Drain Current (t ≤ 10 µs)

Total Power Dissipation @ T = 25°C

225

– 55 to 150

625

°C

Operating and Storage Temperature Range

Thermal Resistance — Junction–to–Ambient

T , T

stg

°C/W

°C

θJA

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds

260

ORDERING INFORMATION

Device

Reel Size

Tape Width

Quantity

3000

MGSF1N03LT1

MGSF1N03LT3

7″

8mm embossed tape

13″

10,000

GreenLine is a trademark of Motorola, Inc.

HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

M_Mot_oo_tor_ro_ol_la_a,S_Inm_{c. 1}a₉ll₉–₆Signal Transistors, FETs and Diodes Device Data

12 3 4 5 6

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