Datasheet > MGSF1N03L

MGSF1N03L

更新时间： 2024-11-21 12:30:59

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	170K
描述
Power MOSFET 30 V, 2.1 A, Single NâChannel, SOTâ23

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MGSF1N03L 数据手册

Product specification

MGSF1N03L, MVGSF1N03L

Power MOSFET

30 V, 2.1 A, Single N−Channel, SOT−23

TYP

I MAX

(BR)DSS

DS(on)

80 mW @ 10 V

30 V

2.1 A

These miniature surface mount MOSFETs low R

assure

125 mW @ 4.5 V

DS(on)

minimal power loss and conserve energy, making these devices ideal

for use in space sensitive power management circuitry. Typical

applications are dc−dc converters and power management in portable

and battery−powered products such as computers, printers, PCMCIA

cards, cellular and cordless telephones.

N−Channel

Features

• Low R

Provides Higher Efficiency and Extends Battery Life

DS(on)

• Miniature SOT−23 Surface Mount Package Saves Board Space

• AEC−Q101 Qualified and PPAP Capable − MVGSF1N03LT1

• These Devices are Pb−Free and are RoHS Compliant

MARKING DIAGRAM/

PIN ASSIGNMENT

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

Drain

DSS

Gate−to−Source Voltage

N3 M G

SOT−23

CASE 318

STYLE 21

Continuous Drain

Current R

Steady T = 25°C

2.1

State

T = 85°C

1.5

Power Dissipation

Steady T = 25°C

0.69

Gate

Source

State

= Specific Device Code

= Date Code*

= Pb−Free Package

Continuous Drain

Current (Note 1)

Steady T = 25°C

1.6

1.2

State

T = 85°C

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

Power Dissipation

(Note 1)

T = 25°C

0.42

Pulsed Drain Current

t = 10 ms

6.0

ESD Capability

(Note 3)

C = 100 pF,

RS = 1500 W

ESD

125

ORDERING INFORMATION

†

Device

Package

Shipping

Operating Junction and Storage Temperature T , T

−55 to 150

2.1

°C

STG

MGSF1N03LT1G

MGSF1N03LT3G

SOT−23

Pb−Free

3000 / Tape &

Reel

Source Current (Body Diode)

Lead Temperature for Soldering Purposes

(1/8” from case for 10 sec)

260

°C

SOT−23

(Pb−Free)

10000 / Tape &

Reel

THERMAL RESISTANCE RATINGS

MVGSF1N03LT1G

SOT−23

(Pb−Free)

3000 / Tape &

Reel

Parameter

Symbol

Max

180

300

250

400

Unit

Junction−to−Foot − Steady State

°C/W

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Junction−to−Ambient − Steady State (Note 1)

Junction−to−Ambient − t < 10 s (Note 1)

Junction−to−Ambient − Steady State (Note 2)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 650 mm , 1 oz. Cu pad size.

2. Surface−mounted on FR4 board using 50 mm , 1 oz. Cu pad size.

3. ESD Rating Information: HBM Class 0.

http://www.twtysemi.com

sales@twtysemi.com

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与MGSF1N03L相关器件

型号	品牌	获取价格	描述	数据表
MGSF1N03LT1	ONSEMI	获取价格	Power MOSFET 30 V, 2.1 A, Single N−Channel, SOT−23
MGSF1N03LT1	MOTOROLA	获取价格	N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
MGSF1N03LT1G	TYSEMI	获取价格	Power MOSFET 30 V, 2.1 A, Single NâChannel,
MGSF1N03LT1G	ONSEMI	获取价格	单 N 沟道小信号功率 MOSFET 30V，2.1A，100 mΩ
MGSF1N03LT3	ONSEMI	获取价格	Power MOSFET 30 V, 2.1 A, Single N−Channel, SOT−23
MGSF1N03LT3	MOTOROLA	获取价格	N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
MGSF1N03LT3G	ONSEMI	获取价格	Power MOSFET 30 V, 2.1 A, Single N−Channel, SOT−23
MGSF1N03LT3G	TYSEMI	获取价格	Power MOSFET 30 V, 2.1 A, Single NâChannel,
MGSF1P02	WEITRON	获取价格	Power MOSFET P-Channel
MGSF1P02ELT1	ONSEMI	获取价格	Power MOSFET 750 mAmps, 20 Volts P?Channel SOT?23

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