是否Rohs认证: | 不符合 | 生命周期: | Active |
零件包装代码: | DIP | 包装说明: | DIP, DIP28,.6 |
针数: | 28 | Reach Compliance Code: | compliant |
风险等级: | 5.84 | 最长访问时间: | 55 ns |
I/O 类型: | SEPARATE | JESD-30 代码: | R-XDIP-T28 |
JESD-609代码: | e0 | 内存密度: | 262144 bit |
内存集成电路类型: | STANDARD SRAM | 内存宽度: | 4 |
端子数量: | 28 | 字数: | 65536 words |
字数代码: | 64000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 64KX4 | 输出特性: | 3-STATE |
封装主体材料: | CERAMIC | 封装代码: | DIP |
封装等效代码: | DIP28,.6 | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 并行/串行: | PARALLEL |
认证状态: | Not Qualified | 最大待机电流: | 0.01 A |
最小待机电流: | 4.5 V | 子类别: | SRAMs |
最大压摆率: | 0.1 mA | 表面贴装: | NO |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MB81C86-55CV | FUJITSU |
获取价格 |
Standard SRAM, 64KX4, 55ns, CMOS, CQCC32 | |
MB81C86-70C | FUJITSU |
获取价格 |
Standard SRAM, 64KX4, 70ns, CMOS, CDIP28, METAL SEALED, SIDE BRAZED, CERAMIC, DIP-28 | |
MB81C86-70CV | FUJITSU |
获取价格 |
Standard SRAM, 64KX4, 70ns, CMOS, CQCC32 | |
MB81E161622-10FH-X | FUJITSU |
获取价格 |
Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO54, PLASTIC, TSOP2-54 | |
MB81E161622-12FH | FUJITSU |
获取价格 |
Synchronous DRAM, 1MX16, 7ns, CMOS, PDSO54, PLASTIC, TSOP2-54 | |
MB81E643242-13FN | FUJITSU |
获取价格 |
Synchronous DRAM, 2MX32, 7ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP2-86 | |
MB81E643242-15FN | FUJITSU |
获取价格 |
Synchronous DRAM, 2MX32, 8ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP2-86 | |
MB81EDS253245 | FUJITSU |
获取价格 |
DRAM | |
MB81EDS256445 | FUJITSU |
获取价格 |
MEMORY Consumer FCRAM CMOS 256M Bit (4 bank x 1M word x 64 bit) Consumer Applications Spec | |
MB81EDS256545 | FUJITSU |
获取价格 |
DRAM |