Datasheet > MB81ES641645A-07

MB81ES641645A-07

更新时间： 2024-09-17 04:16:47

品牌	Logo	应用领域
富士通 - FUJITSU		/
页数	文件大小	规格书
1页	63K
描述
64 Mbit SDR I/F Consumer FCRAM Consumer Embedded Application Specific Memory

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数据手册

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MB81ES641645A-07 数据手册

FUJITSU SEMICONDUCTOR

INTRODUCTION SHEET

NP05-11453-1E

64 Mbit SDR I/F Consumer FCRAM^TM

Consumer Embedded Application Specific Memory

MB81ES641645A-07

ꢀ FEATURES

•

SDRAM Interface

1 M word × 16 bit × 4 bank organization

•

1.8 V Low Power Supply (V_DD= V_DDQ

4K Refresh Cycle every 64ms

Auto- and Self-Refresh

Burst Read / Burst Write and Burst Read / Single Write Operation Capability

Programmable Partial Array Self Refresh (PASR)

Programmable Driver Strength (DS)

)

•

Deep Power Down Mode

CKE Power Down Mode

ꢀ MAIN SPECIFICATIONS

Part Number

MB81ES641645A-07

Organization

1 M Word × 16 bit × 4 bank

Supply Voltage (V_DD= V_DDQ

)

1.7 V to 1.95 V

81 MHz

135 MHz

12.3 ns

7.4 ns

CL＝2

CL＝3

CL＝2

CL＝3

CL＝2

CL＝3

Clock Frequency (Max.)

Clock Period (t_CK) (Min.)

9 ns

Access Time from Clock

(t_AC) (Max.)

6.5 ns

Operating Current (Max.)

T.B.D.

Standby Current (Power Down Mode) (Max.)

Self Refresh Current (Max.)

T.B.D.

Note: FCRAM is a trademark of Fujitsu Limited, Japan.

July, 2007

1/1

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