Datasheet > MB81ES653225

MB81ES653225

更新时间： 2024-09-16 21:55:11

品牌	Logo	应用领域
富士通 - FUJITSU		/
页数	文件大小	规格书
44页	449K
描述
Consumer/Embedded Application Specific Memory for SiP

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中文翻译

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数据手册

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MB81ES653225 数据手册

FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-11411-2E

MEMORY

CMOS

2 × 1 M × 32-BIT

SINGLE DATA RATE I/F FCRAM^TM

Consumer/Embedded Application Specific Memory for SiP

MB81ES653225-12/-12L

CMOS 2-Bank × 1,048,576-Word × 32-Bit

Fast Cycle Random Access Memory (FCRAM) with Single Data Rate for SiP

■ DESCRIPTION

The Fujitsu MB81ES653225 is a Single Data Rate Interface Fast Cycle Random Access Memory (FCRAM*)

containing 67,108,864 memory cells accessible in a 32-bit format. The MB81ES653225 features a fully synchro-

nous operation referenced to a positive edge clock whereby all operations are synchronized at a clock input which

enables high performance and simple user interface coexistence.

The MB81ES653225 is utilized using a Fujitsu advanced FCRAM core technology and designed for low power

consumption and low voltage operation than regular synchronous DRAM (SDRAM) .

The MB81ES653225 is dedicated for SiP (System in a package) , and ideally suited for various embedded/

consumer applications including digital AVs and image processing where a large band width and low power

consumption memory is needed.

* : FCRAM is a trademark of Fujitsu Limited, Japan.

■ PRODUCT LINE

MB81ES653225

Parameter

12L

CL = 2

CL = 3

CL = 2

CL = 3

CL = 2

CL = 3

54.0 MHz

85.0 MHz

18.5 ns

11.7 ns

12 ns

Clock Frequency (Max)

Burst Mode Cycle Time (Min)

Access Time from Clock (Max)

8.7 ns

Operating Current (Max) (32 page length)

Power Down Mode Current (Max)

35 mA

0.5 mA

0.1 mA

Self Refresh Current (Max) (Ta = +85 °C)

1000 µA

450 µA

12 3 4 5 6 7...44

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