Datasheet > MB81F643242B-10FN-X-S

MB81F643242B-10FN-X-S

更新时间： 2024-11-07 19:16:35

品牌	Logo	应用领域
富士通 - FUJITSU		动态存储器
页数	文件大小	规格书
56页	455K
描述
DRAM

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中文翻译

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技术参数
数据手册

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MB81F643242B-10FN-X-S 技术参数

生命周期：	Obsolete	零件包装代码：	TSOP2
包装说明：	,	针数：	86
Reach Compliance Code：	unknown	风险等级：	5.82
Base Number Matches：	1

MB81F643242B-10FN-X-S 数据手册

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FUJITSU SEMICONDUCTOR

DATA SHEET

AE0.3E

MEMORY

CMOS

4 × 512 K × 32 BIT

SYNCHRONOUS DYNAMIC RAM

MB81F643242B-10FN-X

CMOS 4-Bank × 524,288-Word × 32 Bit

Synchronous Dynamic Random Access Memory

■ DESCRIPTION

The Fujitsu MB81F643242B is a CMOS Synchronous Dynamic Random Access Memory (SDRAM) containing

67,108,864 memory cells accessible in a 32-bit format. The MB81F643242B features a fully synchronous

operation referenced to a positive edge clock whereby all operations are synchronized at a clock input which

enables high performance and simple user interface coexistence. The MB81F643242B SDRAM is designed to

reduce the complexity of using a standard dynamic RAM (DRAM) which requires many control signal timing

constraints, and may improve data bandwidth of memory as much as 5 times more than a conventional DRAM.

The MB81F643242B is ideally suited for workstations, personal computers, laser printers, high resolution graphic

adapters/accelerators and other applications where an extremely large memory and bandwidth are required and

where a simple interface is needed.

■ PRODUCT LINE & FEATURES

Parameter

CL - t^RCD- t^RP@ 66 MHz

MB81F643242B-10FN-X

3 - 3 - 3 clk min.

100 MHz max.

10 ns min.

CL = 3

Clock Frequency

Burst Mode Cycle Time

Access Time from Clock

Operating Current

CL = 3

7 ns max.

105 mA max.

2 mA max.

Power Down Mode Current (I^CC2P)

Self Refresh Current (I^CC6)

2 mA max.

• Single +3.3 V Supply ±0.3 V tolerance

• LVTTL compatible I/O interface

• 4 K refresh cycles every 16 ms

• Four bank operation

• Programmable burst type, burst length, and

CAS latency

• Auto-refresh (every 3.9 µs)

• CKE power down mode

• Burst read/write operation and burst

read/single write operation capability

• Output Enable and Input Data Mask

12 3 4 5 6 7...56

中文翻译

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与MB81F643242B-10FN-X-S相关器件

型号	品牌	获取价格	描述	数据表
MB81F643242B-70FN	FUJITSU	获取价格	Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP2-86
MB81F643242B-70FN-S	FUJITSU	获取价格	Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP2-86
MB81F643242C	FUJITSU	获取价格	4 X 512 K X 32 BIT SYNCHRONOUS DYNAMIC RAM
MB81F643242C-10	FUJITSU	获取价格	4 X 512 K X 32 BIT SYNCHRONOUS DYNAMIC RAM
MB81F643242C-60	FUJITSU	获取价格	4 X 512 K X 32 BIT SYNCHRONOUS DYNAMIC RAM
MB81F643242C-70	FUJITSU	获取价格	4 X 512 K X 32 BIT SYNCHRONOUS DYNAMIC RAM
MB81F64442B-103LFN	FUJITSU	获取价格	Synchronous DRAM, 16MX4, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54
MB81F64842B-103EFN	FUJITSU	获取价格	Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54
MB81F64842B-103FN	FUJITSU	获取价格	Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54
MB81F64842B-103LFN	FUJITSU	获取价格	Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54

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