Datasheet > MB81ES171625

MB81ES171625

更新时间： 2024-09-16 21:54:55

品牌	Logo	应用领域
富士通 - FUJITSU		/
页数	文件大小	规格书
43页	519K
描述
SINGLE DATA RATE I/F FCRAM Consumer/Embedded Application Specific Memory for SiP

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MB81ES171625 数据手册

FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-11408-3E

MEMORY

CMOS

2 × 512 K × 16 BIT / 2 × 256 K × 32 BIT

SINGLE DATA RATE I/F FCRAM^TM(Extended Temp. Version)

Consumer/Embedded Application Specific Memory for SiP

MB81ES171625/173225-15-X

■ DESCRIPTION

The Fujitsu MB81ES171625/173225 is a Fast Cycle Random Access Memory (FCRAM*) containing 16,777,216

bit memory cells accessible in a 2×512K×16 bit / 2×256K×32 bit format. The MB81ES171625/173225 features a

fully synchronous operation referenced to a positive edge clock same as that of SDRAM operation, whereby all

operations are synchronized at a clock input which enables high performance and simple user interface coexist-

ence.

The MB81ES171625/173225 is utilized using a Fujitsu advanced FCRAM core technology and designed for low

power consumption and low voltage operation than regular synchronous DRAM (SDRAM).

The MB81ES171625/173225 is dedicated for SiP (System in a Package), and ideally suited for various embedded/

consumer applications including digital AVs, and image processing where a large band width and low power

consumption memory is needed.

* : FCRAM is a trademark of Fujitsu Limited, Japan.

■ PRODUCT LINEUP

Parameter

MB81ES171625/173225-15-X

Clock Frequency (Max)

66.7 MHz

30 ns

15 ns

27 ns

12 ns

75 ns

30 mA

1 mA

CL = 1

CL = 2

CL = 1

CL = 2

Burst Mode Cycle Time (Min)

Access Time From Clock (Max)

XRAS Cycle Time (Min)

Operating Current (Max) (I^DD1)

Power Down Mode Current (Max) (I^DD2P)

Self-refresh Current (Max) (I^DD6)

5 mA

12 3 4 5 6 7...43

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MB81ES171625-15WFKT-X	FUJITSU	获取价格	SINGLE DATA RATE I/F FCRAM Consumer/Embedded Application Specific Memory for SiP
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