Datasheet > MB81EDS253245

MB81EDS253245

更新时间： 2024-09-17 20:44:03

品牌	Logo	应用领域
富士通 - FUJITSU		动态存储器
页数	文件大小	规格书
52页	1776K
描述
DRAM

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中文翻译

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技术参数
数据手册

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MB81EDS253245 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.75
Base Number Matches：	1

MB81EDS253245 数据手册

FUJITSU MICROELECTRONICS

DATA SHEET

DS05-11465-1E

MEMORY Consumer FCRAM^TM

CMOS

256M Bit (4 bank x 2M word x 32 bit)

Consumer Applications Specific Memory for SiP

MB81EDS253245

■ DESCRIPTION

The MB81EDS253245 is a CMOS Fast Cycle Random Access Memory (FCRAM*) with Low Power Double

Data Rate (LPDDR) SDRAM Interface containing 268,435,456 storages accessible in a 32-bit format.

MB81EDS253245 is suited for consumer application requiring high data band width with low power consumption.

* : FCRAM is a trademark of Fujitsu Microelectronics Limited, Japan

■ FEATURES

• 2 M word × 32 bit × 4 banks organization

• DDR Burst Read/Write Access Capability

-t^CK= 4.6 ns Min / 216 MHz Max (Tj ≤ + 105 °C)

-t^CK= 5 ns Min / 200 MHz Max (Tj ≤ + 125 °C)

• Low Voltage Power Supply: V^DD= VDDQ = + 1.7 V to + 1.95 V

• Junction Temperature:

• 1.8 V CMOS compatible inputs

• Burst Length: 2, 4, 8, 16

• CAS latency: 2, 3, 4

T^J= − 10 °C to + 125 °C

• Clock Stop capability during idle periods

• Auto Precharge option for each burst access

• Configurable Driver Strength and Pre Driver Strength

• Auto Refresh and Self Refresh Modes

• Deep Power Down Mode

• Low Power Consumption

-I^DD4R=235 mA Max @ 1.73 GByte/s

-I^DD4W=265 mA Max @ 1.73 GByte/s

• 4 K refresh cycles / 4 ms (Tj ≤ +125 °C)

2009.11

12 3 4 5 6 7...52

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