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MB81EDS516545

更新时间： 2024-09-17 11:13:19

品牌	Logo	应用领域
富士通 - FUJITSU		存储内存集成电路
页数	文件大小	规格书
60页	420K
描述
512M Bit (4 bank x 2M word x 64 bit) Consumer Applications Specific Memory for SiP

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技术参数
数据手册

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MB81EDS516545 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.69
Base Number Matches：	1

MB81EDS516545 数据手册

FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-11463-2E

MEMORY Consumer FCRAM^TM

CMOS

512M Bit (4 bank x 2M word x 64 bit)

Consumer Applications Specific Memory for SiP

MB81EDS516545

■ DESCRIPTION

The Fujitsu MB81EDS516545 is a CMOS Fast Cycle Random Access Memory (FCRAM*) with Low Power Double

Data Rate (LPDDR) SDRAM Interface containing 536, 870, 912 storages accessible in a 64-bit format.

MB81EDS516545 is suited for consumer application requiring high data band width with low power consumption.

* : FCRAM is a trademark of Fujitsu Semiconductor Limited, Japan

■ FEATURES

• 2 M word × 64 bit × 4 banks organization

• DDR Burst Read/Write Access Capability

-tCK = 4.6 ns Min / 216 MHz Max (Tj ≤ + 105 °C)

-t^CK= 5 ns Min / 200 MHz Max (Tj ≤ + 125 °C)

• Low Voltage Power Supply: VDD = VDDQ + 1.7 V to + 1.9 V

• Junction Temperature:

TJ = − 10 °C to + 125 °C

• 1.8 V-CMOS compatible inputs

• Unidirectional READ Data Strobe per 2 byte

• Unidirectional WRITE Data Strobe per 2 byte

• Burst Length: 2, 4, 8, 16

• CAS latency: 2, 3, 4

• Clock Stop capability during idle periods

• Auto Precharge option for each burst access

• Configurable Driver Strength and Pre Driver Strength

• Auto Refresh and Self Refresh Modes

• Deep Power Down Mode

• Low Power Consumption

-I^DD4R=330 mA Max @ 3.46 GByte/s

-IDD4W =380 mA Max @ 3.46 GByte/s

• 8 K refresh cycles /16.7 ms (Tj ≤ +125 °C)

(Continued)

2010.7

12 3 4 5 6 7...60

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