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MB81E161622-10FH-X PDF预览

MB81E161622-10FH-X

更新时间: 2024-09-17 20:00:23
品牌 Logo 应用领域
富士通 - FUJITSU 时钟动态存储器光电二极管内存集成电路
页数 文件大小 规格书
43页 521K
描述
Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO54, PLASTIC, TSOP2-54

MB81E161622-10FH-X 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP2包装说明:TSOP2, TSOP54,.46,32
针数:54Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.02
风险等级:5.92访问模式:DUAL BANK PAGE BURST
最长访问时间:6 ns其他特性:AUTO REFRESH
最大时钟频率 (fCLK):100 MHzI/O 类型:COMMON
交错的突发长度:2,4,8JESD-30 代码:R-PDSO-G54
长度:22.22 mm内存密度:16777216 bit
内存集成电路类型:SYNCHRONOUS DRAM内存宽度:16
功能数量:1端口数量:1
端子数量:54字数:1048576 words
字数代码:1000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:1MX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装等效代码:TSOP54,.46,32封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE峰值回流温度(摄氏度):NOT SPECIFIED
电源:3.3 V认证状态:Not Qualified
座面最大高度:1.2 mm连续突发长度:1,2,4,8,FP
最大待机电流:0.0006 A子类别:DRAMs
最大压摆率:0.13 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:10.16 mm
Base Number Matches:1

MB81E161622-10FH-X 数据手册

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FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-11406-1E  
MEMORY  
CMOS  
2 × 512 K × 16 Bit  
Single Data Rate I  
/
F FCRAMTM(Extended Temp.Version)  
Consumer/Embedded Application Specific Memory  
MB81E161622-10-X/-12-X  
CMOS 2-Bank × 524,288-Word × 16 Bit  
Fast Cycle Random Access Memory (FCRAM) with Single Data Rate  
DESCRIPTION  
The Fujitsu MB81E161622 is a Fast Cycle Random Access Memory (FCRAM*) containing 16,777,216 memory  
cells accessible in a 16-bit format. The MB81E161622 features a fully synchronous operation referenced to a  
positive edge clock, whereby all operations are synchronized at a clock input which enables high performance  
and simple user interface coexistence.  
The MB81E161622 is utilized using a Fujitsu advanced FCRAM core technology and designed to improve the  
randomaccessperformanceandthecomplexityofcontrollingregularsynchronousDRAM(SDRAM)whichrequire  
many wait state due to long latency constraints.  
The MB81E161622 is ideally suited for various embedded/consumer applications including digital AVs, printers  
and file storage where a large band width memory is needed.  
* : FCRAM is a trademark of Fujitsu Limited, Japan.  
PRODUCT LINEUP  
MB81E161622  
Parameter  
-10-X  
-12-X  
Clock Frequency @CL = 2  
100 MHz Max.  
15 ns Min.  
10 ns Min.  
10 ns Max.  
6 ns Max.  
84 MHz Max.  
20 ns Min.  
12 ns Min.  
14 ns Max.  
7 ns Max.  
CL = 1  
CL = 2  
CL = 1  
CL = 2  
Burst Mode Cycle Time  
Access Time From Clock  
RAS Cycle Time  
30 ns Min.  
130 mA Max.  
36 ns Min.  
120 mA Max.  
Operating Current (ICC1)  
Power Down Mode Current (ICC2P)  
0.6 mA Max.  

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