GaN Amplifier 50 V, 25 W
30 - 2700 MHz
MAPC-A1000
Rev. V2
Features
• MACOM PURE CARBIDE™ Amplifier Series
•
•
•
•
Suitable for Linear & Saturated Applications
CW & Pulsed Operation: 25 W Output Power
50 Ω Input Matched
260°C Reflow Compatible
6.5 x 7.0 mm DFN
• 28 V & 50 V
•
•
100% RF Tested
RoHS* Compliant
Functional Schematic
Description
The MAPC-A1000 is a GaN on Silicon Carbide
HEMT D-mode amplifier suitable for 30 - 3000 MHz
frequency operation. The device supports both CW
and pulsed operation with minimum output power
levels of 25 W (44 dBm) in a 6.5 x 7.0 mm plastic
package.
N/C
1
2
3
4
5
6
VG
RFIN
N/C
Input
Match
RFOUT
N/C
7
Pad
The MAPC-A1000 has a wide range of applications,
including military radio communications, RADAR,
avionics, digital cellular infrastructure, RF energy,
and test instrumentation.
Typical Performance:
Pin Configuration
•
Measured under load-pull at 2.5 dB Compression,
100 µs pulse width, 10% duty cycle.
•
VDS = 50 V, IDQ = 40 mA, TC = 25°C
1
VG
RFIN
Gate
RF Input
2
2
Frequency
D
(GHz)
(%)
3, 4, 6
N/C
No Connection
RF Output / Drain
Ground / Source
0.9
45.8
45.8
45.9
45.9
45.9
13.1
12.6
12.5
11.6
10.8
77.2
76.4
74.3
72.0
69.6
5
7
RFOUT / VD
Pad3
1.4
2.0
2.7
3. The pad on the package bottom must be connected to RF, DC
and thermal ground.
3.0
•
VDS = 28 V, IDQ = 40 mA, TC = 25°C
Frequency
Ordering Information
2
D
(GHz)
(%)
74.0
73.0
71.5
70.7
68.2
Part Number
Package
0.9
43.1
43.0
43.2
43.3
43.2
11.0
10.8
10.7
9.6
MAPC-A1000-AD000
MAPC-A1000-ADTR1
MAPC-A1000-ADSB1
Bulk Quantity
Tape and Reel
Sample Board
1.4
2.0
2.7
3.0
8.8
1. Load impedance tuned for maximum output power.
2. Load impedance tuned for maximum drain efficiency.
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.
1
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Visit www.macom.com for additional data sheets and product information.
For further information andsupport please visit:
https://www.macom.com/support
DC-0023096