GaN Amplifier 50 V, 50 W
3.4 - 4.0 GHz
MAPC-A2001
Rev. V1
Features
•
•
Optimized for Cellular Base Station Applications
Designed for Digital Predistortion Error
Correction Systems
•
High Terminal Impedances for Broadband
Performance
7.0 x 6.5 mm DFN
•
•
50 V Operation
Compatible with MACOM Power Management
Bias Controller/Sequencer MABC-11040
100 % RF Tested
Functional Schematic
•
•
RoHS* Compliant
Description
RFIN
/
RFOUT
VD
/
/
1
2
3
6
5
4
VG
The MAPC-A2001 is a higher power GaN on
Silicon Carbide HEMT D-mode amplifier
designed for 5G base station applications and
optimized for 3.4 - 4.0 GHz modulated signal
operation. The device supports pulsed and
linear operation with peak output power levels
to 50W (47 dBm) in a 7.0 x 6.5mm DFN
package.
N/C
N/C
7
Pad
RFOUT
VD
RFIN
VG
/
Typical RF Performance
Pin Configuration
•
WCDMA 3GPP TM1 64 DPCH 9.9 dB PAR @
0.01% CCDF, VDS = 50 V, IDQCAR = 60 mA,
VGSPK = -4.5 V, TCASE = 25°C, POUT = 38.5 dBm.
1
2,5
3
RFIN / VG
N/C
RF Input / Gate (Carrier)
No Connection
Frequency
(GHz)
Output PAR
(dB)
ACPR
(dBc)
RFIN / VG
RF Input / Gate (Peaking)
3.4
3.6
3.8
14.9
16.1
15.2
52
50
50
8.1
8.5
8.4
-29
-31
-31
4
RFOUT / VD RF Output / Drain (Peaking)
6
7
RFOUT / VD
Pad1
RF Output / Drain (Carrier)
Ground / Source
1. The pad on the package bottom must be connected to RF, DC
and thermal ground.
Ordering Information
Part Number
Package
MAPC-A2001-AD000
MAPC-A2001-ADTR1
MAPC-A2001-ADSB1
Bulk Quantity
Tape and Reel
Doherty Sample Board
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.
1
MACOM Technology Solutions Inc. (MACOM ) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
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DC-0025521