GaN Amplifier 50 V, 60 W AVG
3.3 - 3.8 GHz
MAPC-A2500
Rev. V4
Features
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•
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MACOM PURE CARBIDE® Amplifier Series
Optimized for Cellular Base Station Applications
Designed for Digital Predistortion Error
Correction Systems
•
•
Optimized for Asymmetrical Doherty Application
High Terminal Impedances for Broadband
Performance
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•
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50 V Operation
100% RF Tested
RoHS* Compliant
AC-780S-4
Functional Schematic
Description
The MAPC-A2500 is a high power GaN on Silicon
Carbide HEMT D-mode amplifier suitable for
asymmetrical Doherty base station applications with
60W average power and optimized for 3.3 - 3.8 GHz
modulated signal operation. The device supports
pulsed, and linear operation with peak output power
levels to 420 W (56.2 dBm) in an air cavity ceramic
package.
RFIN / VG
RFOUT / VD
1
2
4
Flange
5
RFIN / VG
RFOUT / VD
3
Typical Doherty Performance:
•
WCDMA 3GPP TM1, 10 dB PAR @ 0.01%
CCDF. VDS = 50 V, IDQCAR = 350 mA,
VGSPK = -4.8 V, TC = 25°C, POUT = 47.8 dBm
Pin Configuration
1
2
3
4
5
RFIN / VG
RFOUT / VD
RFIN / VG
RFOUT / VD
Flange1
RF Input / Gate (Carrier)
RF Output / Drain (Carrier)
RF Input / Gate (Peaking)
RF Output / Drain (Peaking)
Ground / Source
Frequency
(GHz)
Output PAR ACPR
D (%)
(dB)
(dBc)
3.4
3.6
3.8
14.4
14.7
13.1
40.5
43.0
43.6
8.2
8.0
8.1
-27.0
-34.5
-33.4
1. The flange on the package bottom must be connected to RF,
DC and thermal ground.
Ordering Information
Part Number
Package
MAPC-A2500-AS000
MAPC-A2500-ASTR1
MAPC-A2500-ASSB1
Bulk Quantity
Tape and Reel
Sample Board
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.
1
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DC-0024477