GaN Amplifier 50 V, 90 W
3.3 - 3.8 GHz
MAPC-A2004-B
Rev. V1
Features
•
•
Optimized for Cellular Base Station Applications
Designed for Digital Predistortion Error
Correction Systems
•
High Terminal Impedances for Broadband
Performance
7.0 x 6.5 mm DFN
•
•
50 V Operation
Compatible with MACOM Power Management
Bias Controller/Sequencer MABC-11040
100% RF Tested
Functional Schematic
•
•
RoHS* Compliant
Description
RFIN
/
RFOUT
VD
/
/
The MAPC-A2004-B is a high power GaN on Silicon
Carbide HEMT D-mode amplifier designed for 5G
base station applications and optimized for 3.3 - 3.8
GHz modulated signal operation. This device
supports pulsed and linear operation with peak
output power levels to 90 W (49.5 dBm) in an
7.0 x 6.5 mm DFN package.
1
2
3
6
5
4
VG
N/C
N/C
7
Pad
RFOUT
VD
RFIN
VG
/
Typical RF Performance
•
WCDMA 3GPP TM1 64 DPCH 9.9 dB PAR @
0.01% CCDF, VDS = 50 V, IDQCAR = 100 mA,
VGSP = -4.4 V, TC = 25°C, POUT = 40.3 dBm
Pin Configuration
Frequency
(GHz)
Output PAR
(dB)
ACPR
(dBc)
1
2,5
6
RFIN / VG
N/C
RF Input / Gate (Carrier)
No Connection
3.4
3.6
3.8
14.1
13.7
13.1
46
43
48
7.9
8.4
7.9
-29
-40
-30
RFOUT / VD
RFIN / VG
RF Output / Drain (Carrier)
RF Input / Gate (Peaking)
3
4
7
RFOUT / VD RF Output / Drain (Peaking)
Pad1
Ground / Source
Ordering Information
1. The pad on the package bottom must be connected to RF, DC
and thermal ground.
Part Number
Package
MAPC-A2004-BD000
MAPC-A2004-BDTR1
MAPC-A2004-BDSB1
Bulk Quantity
Tape and Reel
Doherty Sample Board
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.
1
MACOM Technology Solutions Inc. (MACOM ) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
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https://www.macom.com/support
DC-0029904