GaN Amplifier 32 V, 8 W
1.8 - 2.7 GHz
MAPC-A2021
Rev. V2
Features
•
•
•
MACOM PURE CARBIDE™ Amplifier Series
Optimized for 1.8 - 2.7 GHz Applications
High Terminal Impedances for Broadband
Performance
•
•
•
•
26 - 32 V Operation
Low Thermal Resistance
100% RF Tested
4 mm QFN
RoHS* Compliant
Applications
Functional Schematic
•
•
5G Cellular Networks
Tri-band Small Cells
N/C N/C N/C N/C N/C
16
20
19
18
17
Description
12
The MAPC-A2021 is a GaN on Silicon Carbide
HEMT D-mode amplifier suitable for applications 1W
average power and optimized for 1.8 - 2.7 GHz
modulated signal operation. The device supports
pulsed, and linear operation with peak output power
levels to 8 W (39 dBm) in an 4 mm surface mount
QFN package.
VG
N/C
RFIN
N/C
N/C
1
2
3
4
5
15 N/C
14 N/C
Input
Match
13 RFOUT/VD
12 N/C
6
21
Pad
11 N/C
Typical Circuit Performance:
•
WCDMA 3GPP TM1, 10 dB PAR @ 0.01%
CCDF. VDS = 32 V, IDQ = 60 mA, TC = 25°C,
POUT = 32 dBm
6
10
N/C N/C
7
8
9
Shunt
N/C N/C
Frequency
(GHz)
Output PAR ACPR
Pin Configuration
D (%)
(dB)
(dBc)
1.8
2.3
2.7
16.1
15.9
16.4
37
36
38
7.2
6.9
6.8
-35.5
-37.1
-35.5
1
VG
Gate Voltage
2, 4-7,
9-12, 14-20
N/C
Not Connected
3
8
RFIN
SHUNT
RFOUT / VD
Pad1
RF Input
Gate Shunt Capacitor
Ordering Information
Part Number
13
21
RF Output / Drain Voltage
Ground / Source
Package
1. The pad on the package bottom must be connected to RF, DC
and thermal ground.
MAPC-A2021-AQ000
MAPC-A2021-AQTR1
MAPC-A2021-AQSB1
Bulk Quantity
Tape and Reel
Sample Board
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.
1
MACOM Technology Solutions Inc. (MACOM ) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
For further information and support please visit:
https://www.macom.com/support
DC-0028262