GaN Amplifier 50 V, 60 W
5.2 - 5.9 GHz
MAPC-S1504
Rev. V1
Features
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MACOM PURE CARBIDE™ Amplifier Series
Suitable for Linear & Saturated Applications
CW & Pulsed Operation: 60 W Output Power
50 Ω Impedance Matched
50 V Operation
Compatible with MACOM Power Management
Bias Controller/Sequencer MABC-11040
RoHS* Compliant
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AC-400B-2N
Applications
Military Radio Communications, RADAR, Avionics,
Digital Cellular Infrastructure, RF Energy, and
Test Instrumentation.
Functional Schematic
Description
The MAPC-S1504 is a high power GaN on Silicon
Carbide HEMT D-mode amplifier suitable for
5.2 - 5.9 GHz frequency operation. The device
supports pulsed operation with peak output power
levels of at least 60 W (47.8 dBm) in an air cavity
ceramic package.
RFOUT/VD
RFIN/VG
Flange
Typical Performance:
Measured in Evaluation Test Fixture1 at 2.5 dB
Compression, 100 µs pulse width, 10% duty cycle.
Pin Configuration
•
VDS = 50 V, IDQ = 170 mA, TC = 25°C.
Gain
(dB)
Frequency Output Power
Efficiency
(%)
1
2
3
RFIN / VG
RFOUT / VD
Flange2
RF Input / Gate
(GHz)
(dBm)
48.5
48.4
48.4
48.3
47.8
RF Output / Drain
Ground / Source
5.2
13.6
13.9
13.9
14.1
13.5
49.4
50.1
50.5
53.4
47.3
5.4
5.6
2. The flange on the package bottom must be connected to RF,
DC and thermal ground.
5.7
5.9
1. Performance values and curves in this data sheet were
measured in this fixture, de-embedded to the package lead
reference planes.
Ordering Information
Part Number
Package
MAPC-S1504-AS000
MAPC-S1504-ASTR1
MAPC-S1504-ASSB1
Bulk Quantity
Tape and Reel
Sample Board
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.
1
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DC-0025381