Datasheet > MAPC-C22440

MAPC-C22440

更新时间： 2024-11-06 17:15:27

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
10页	590K
描述
Thermally Enhanced GaN Amplifier 400 W, 48 V, 2110 - 2200 MHz

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MAPC-C22440 数据手册

Thermally Enhanced GaN Amplifier

400 W, 48 V, 2110 - 2200 MHz

MAPC-C22440

Rev. V1

Features

Functional Schematic

•

GaN on SiC Technology

Peak

Main

Pulsed CW Performance, 2200 MHz, 48 V, 10 µs

Pulse Width, 10% Duty Cycle, Combined Outputs

Output Power @ P_3dB= 400 W

Efficiency @ P_3dB= 65%

Human Body Model Class 1C (per ANSI/ESDA/

JEDEC JS-001)

•

Pb-free and RoHS* Compliant

Thermally Enhanced Package

-37 248 -4_ _do_ pd_ 10-10 -20 12

Applications

•

Cellular 5G Infrastructure

Description

Pin Configuration

The MAPC-C22440 is a 400 W (P3dB) GaN on SiC

HEMT amplifier designed for use in multi-standard

cellular power applications. It features high

efficiency, and a thermally-enhanced package with

earless flange.

Drain Device 1 (Main)

Drain Device 2 (Peak)

Gate Device 1 (Main)

Gate Device 2 (Peak)

Source (flange)

Typical RF Performance

Single-Carrier WCDMA Specifications¹:

V_DD= 48 V, I_DQ= 750 mA, V_GS(PEAK)= -5.15 V,

T_C= 25°C, Channel Bandwidth = 3.84 MHz,

Peak/Average = 10 dB @ 0.01% CCDF

2100

2155

2200

47.6

Output Power

Gain

dBm

2100

2155

2200

16.6

16.8

16.9

Ordering Information

2100

2155

2200

58.8

57.3

57.7

Efficiency

ACPR+

ACPR-

Bulk Quantity

MAPC-C22440-BS000

MAPC-C22440-BSTR1

Tape and Reel

2100

2155

2200

-28.6

-30.3

-31.2

dBc

2100

2155

2200

-28.7

-29.9

-30.8

2100

2155

2200

8.4

8.8

OPAR

1. Measurements taken on Evaluation Board.

* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

Forfurtherinformationandsupport pleasevisit:

https://www.macom.com/support

DC-0032299

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