GaN Amplifier 50 V, 30 W AVG
3.8 - 4.2 GHz
MAPC-A2520
Rev. V1
Features
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•
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MACOM PURE CARBIDE® Amplifier Series
Optimized for Cellular Base Station Applications
Designed for Digital Predistortion Error Correction
Systems
•
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Optimized for Asymmetrical Doherty Application
High Terminal Impedances for Broadband
Performance
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50 V Operation
100% RF Tested
RoHS* Compliant
AC-780S-4
Functional Schematic
Description
The MAPC-A2520 is a high power GaN on Silicon
Carbide HEMT D-mode amplifier suitable for
asymmetrical Doherty base station applications with
30 W average power and optimized for 3.8 - 4.2 GHz
modulated signal operation. The device supports
pulsed, and linear operation with peak output power
levels to 250 W (54 dBm) in an air cavity ceramic
package.
RFIN / VG
RFOUT / VD
1
2
4
Flange
5
RFIN / VG
RFOUT / VD
3
Typical Doherty Performance:
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3.8 - 4.2 GHz Evaluation Board
Pin Configuration
WCDMA 3GPP TM1, 10 dB PAR @ 0.01% CCDF.
VDS = 50 V, IDQCAR = 300 mA, VGSPK = -4.5 V,
TC = +25°C, POUT = 44.7 dBm
1
2
3
4
5
RFIN / VG
RFOUT / VD
RFIN / VG
RFOUT / VD
Flange1
RF Input / Gate (Carrier)
RF Output / Drain (Carrier)
RF Input / Gate (Peaking)
RF Output / Drain (Peaking)
Ground / Source
Frequency
(GHz)
Output PAR ACPR
D
(dB)
(dBc)
(%)
3.8
4.0
4.2
13.1
14.2
13.0
45.5
45.3
44.0
8.7
8.4
8.1
-29.1
-39.0
-35.4
1. The flange on the package bottom must be connected to RF,
DC and thermal ground.
Ordering Information
Part Number
Package
MAPC-A2520-AS000
MAPC-A2520-ASTR1
MAPC-A2520-ASSB1
Bulk Quantity
Tape and Reel
Sample Board
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.
1
MACOM Technology Solutions Inc. (MACOM ) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
For further information and support please visit:
https://www.macom.com/support
DC-0029578