Datasheet > MAPC-A2025

MAPC-A2025

更新时间： 2024-11-06 17:02:11

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
12页	856K
描述
GaN Amplifier 32 V, 8 W

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数据手册

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MAPC-A2025 数据手册

GaN Amplifier 32 V, 8 W

3.3 - 4.2 GHz

MAPC-A2025

Rev. V1

Features

•

MACOM PURE CARBIDE™ Amplifier Series

Optimized for 3.3 - 4.2 GHz Applications

High Terminal Impedances for Broadband

Performance

•

26 - 36 V Operation

Low Thermal Resistance

100% RF Tested

RoHS* Compliant

4 mm QFN

Applications

Functional Schematic

•

5G Cellular Networks

Tri-band Small Cells

N/C N/C N/C N/C N/C

Description

The MAPC-A2025 is a GaN on Silicon Carbide

HEMT D-mode amplifier suitable for applications 1W

average power and optimized for 3.3 - 4.2 GHz

modulated signal operation. The device supports

pulsed, and linear operation with peak output power

levels to 8 W (39 dBm) in an 4 mm surface mount

QFN package.

V_G

N/C

RF_IN

N/C

15 N/C

14 N/C

Input

Match

13 RF_OUT/V_D

12 N/C

Pad

11 N/C

Typical Doherty Performance:

•

WCDMA 3GPP TM1, 10 dB PAR @ 0.01%

CCDF. V_DS= 32 V, I_DQ= 60 mA, T_C= 25°C,

P_OUT= 32 dBm

N/C N/C

Shunt

N/C N/C

Frequency

(GHz)

Output PAR ACPR

Pin Configuration

_D(%)

(dB)

(dBc)

3.3

16.3

6.8

-33.3

V_G

Gate Voltage

3.6

3.9

4.2

16.0

16.4

16.5

7.6

6.9

-37.1

-37.3

-32.9

2, 4-7,

9-12, 14-20

N/C

Not Connected

RF_IN

SHUNT

RF_OUT/ V_D

Pad¹

RF Input

Gate Shunt Capacitor

Ordering Information

Part Number

RF Output / Drain Voltage

Ground / Source

Package

1. The pad on the package bottom must be connected to RF, DC

and thermal ground.

MAPC-A2025-AQ000

MAPC-A2025-AQTR1

MAPC-A2025-AQSB1

Bulk Quantity

Tape and Reel

Sample Board

* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.

MACOM Technology Solutions Inc. (MACOM ) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

For further information and support please visit:

https://www.macom.com/support

DC-0029838

12 3 4 5 6 7...12

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