GaN Amplifier 50 V, 60 W AVG
3.7 - 4.0 GHz
MAPC-A2503
Rev. V1
Features
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•
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MACOM PURE CARBIDE® Amplifier Series
Optimized for Cellular Base Station Applications
Designed for Digital Predistortion Error Correction
Systems
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Optimized for Asymmetrical Doherty Application
High Terminal Impedances for Broadband
Performance
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50 V Operation
100% RF Tested
RoHS* Compliant
AC-780S-4
Functional Schematic
Description
The MAPC-A2503 is a high power GaN on Silicon
Carbide HEMT D-mode amplifier suitable for
asymmetrical Doherty base station applications with
60W average power and optimized for 3.7 - 4.0 GHz
modulated signal operation. The device supports
pulsed, and linear operation with peak output power
levels to 450W (56.5 dBm) in an air cavity ceramic
package.
RFIN / VG
RFOUT / VD
1
2
4
Flange
5
RFIN / VG
RFOUT / VD
3
Typical Doherty Performance:
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3.7-4.0 GHz Evaluation Board
Pin Configuration
WCDMA 3GPP TM1, 10 dB PAR @ 0.01% CCDF.
VDS = 50 V, IDQCAR = 300mA, VGSPK = -4.4 V,
TCASE = 25°C, POUT = 47.8 dBm
1
2
3
4
5
RFIN / VG
RFOUT / VD
RFIN / VG
RFOUT / VD
Flange1
RF Input / Gate (Carrier)
RF Output / Drain (Carrier)
RF Input / Gate (Peaking)
RF Output / Drain (Peaking)
Ground / Source
Frequency
(GHz)
Output PAR ACPR
D (%)
(dB)
(dBc)
-30.1
-38.1
-38.2
3.7
3.85
4.0
13.1
13.8
13.2
44.7
43.5
41.8
7.7
7.9
7.9
1. The flange on the package bottom must be connected to RF,
DC and thermal ground.
Ordering Information
Part Number
Package
MAPC-A2503-AS000
MAPC-A2503-ASTR1
MAPC-A2503-ASSB1
Bulk Quantity
Tape and Reel
Sample Board
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.
1
MACOM Technology Solutions Inc. (MACOM ) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
For further information and support please visit:
https://www.macom.com/support
DC-0024340