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MAPCGM0003 PDF预览

MAPCGM0003

更新时间: 2024-11-04 21:53:51
品牌 Logo 应用领域
泰科 - TE /
页数 文件大小 规格书
7页 239K
描述
S-Band Phase Shifter 2.3-4.1 GHz

MAPCGM0003 技术参数

是否Rohs认证: 不符合生命周期:Transferred
Reach Compliance Code:unknown风险等级:5.81
Is Samacsys:N安装特点:SURFACE MOUNT
端子数量:28封装主体材料:PLASTIC/EPOXY
封装等效代码:LCC28,.24SQ,25电源:-5 V
射频/微波设备类型:PHASE SHIFTER子类别:RF/Microwave Phase Shifters
表面贴装:YES技术:GAAS
Base Number Matches:1

MAPCGM0003 数据手册

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RO-P-DS-3068 - -  
S-Band Phase Shifter  
2.3-4.1 GHz  
Preliminary Information  
2.3-4.1 GHz GaAs MMIC Phase Shifter  
Features  
¨ 2.3 to 4.1 GHz Operation  
¨ 6 Bit Phase Shifter  
¨ 360º Coverage, LSB = 5.6º  
¨ TTL Control Inputs  
¨ Self-Aligned MSAG® MESFET Process  
¨ 6mm, 28 Lead, FQFP-N Package  
Primary Applications  
¨ Satellite Communication  
¨ Phased Array Radar  
Description  
The MAPCGM0003 is a 6-bit Phase Shifter with Parallel TTL  
Input Control and is packaged in a micro lead package (MLP).  
This product is fully matched to 50 ohms on both the input  
and output. This part has 360º of phase coverage in 5.6º  
increments.  
Pin Number  
Designation  
2
RF IN  
Each device is 100% RF tested on wafer to ensure  
performance compliance. The part is fabricated using  
M/A-COM’s repeatable, high performance and highly reliable  
GaAs Multifunction Self-Aligned Gate (MSAG®) MESFET  
Process.  
20  
22  
23  
RF OUT  
A6 (180°)  
A5 (90°)  
24  
25  
A4 (45°)  
VEE  
26  
A3 (22.5°)  
A2 (11.25°)  
A1 (5.6°)  
27  
28  
1,3-19,21  
No connection  
1
Maximum Operating Conditions  
Parameter  
Absolute Maximum  
Units  
dBm  
V
Symbol  
Input Power  
30  
-4.8  
P
IN  
Source Supply Voltage  
Junction Temperature  
Storage Temperature  
VEE  
TJ  
180  
°C  
TSTG  
-55 to +150  
°C  
1. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may  
result in performance outside the guaranteed limits.  

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