GaN Amplifier 50 V, 90 W AVG
2.3 - 2.4 GHz
MAPC-A2519
Rev. V1
Features
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•
•
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MACOM PURE CARBIDE® Amplifier Series
Optimized for Modulated Signal Applications
Optimized for Asymmetrical Doherty Application
High Terminal Impedances for Broadband
Performance
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•
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50 V Operation
100% RF Tested
RoHS* Compliant
AC-780S-4
Description
Functional Schematic
The MAPC-A2519 is a high power GaN on silicon
carbide HEMT D-mode amplifier suitable for
asymmetrical Doherty applications with 85 W
average power and optimized for 2.3 - 2.4 GHz
modulated signal operation. The device supports
pulsed, and linear operation with peak output power
levels to 600 W (57.8 dBm) in an air cavity ceramic
package.
RFIN / VG
RFOUT / VD
1
3
2
4
Flange
5
RFIN / VG
RFOUT / VD
Typical Doherty Performance:
•
WCDMA 3GPP TM1, 10 dB PAR @ 0.01%
CCDF. VDS = 50 V, IDQCAR = 430 mA, VGSPK
-4.9 V, TC = 25°C, POUT = 49.5 dBm
=
Pin Configuration
Frequency
(GHz)
Output PAR ACPR
D (%)
(dB)
(dBc)
1
2
3
4
5
RFIN / VG
RFOUT / VD
RFIN / VG
RFOUT / VD
Flange1
RF Input / Gate (Carrier)
RF Output / Drain (Carrier)
RF Input / Gate (Peaking)
RF Output / Drain (Peaking)
Ground / Source
2.30
2.35
2.40
17.0
16.6
16.1
48.8
50.1
49.3
8.1
8.3
8.0
-31.6
-32.8
-29.0
1. The flange on the package bottom must be connected to RF,
DC and thermal ground.
Ordering Information
Part Number
Package
MAPC-A2519-AS000
MAPC-A2519-ASTR1
MAPC-A2519-ASSB1
Bulk Quantity
Tape and Reel
Sample Board
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.
1
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For further information and support please visit:
https://www.macom.com/support
DC-0028805