Datasheet > MAPC-A2517

MAPC-A2517

更新时间： 2024-11-06 14:54:55

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
9页	1467K
描述
GaN Amplifier 50 V, 30 W AVG 3.3 - 3.8 GHz

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MAPC-A2517 数据手册

GaN Amplifier 50 V, 30 W AVG

3.3 - 3.8 GHz

MAPC-A2517

Rev. V1

Features

•

MACOM PURE CARBIDE_®Amplifier Series

Optimized for Cellular Base Station Applications

Designed for Digital Predistortion Error Correction

Systems

•

Optimized for Asymmetrical Doherty Application

High Terminal Impedances for Broadband

Performance

•

50 V Operation

100% RF Tested

RoHS* Compliant

AC-780S-4

Functional Schematic

Description

The MAPC-A2517 is a high power GaN on Silicon

Carbide HEMT D-mode amplifier suitable for

asymmetrical Doherty base station applications with

30W average power and optimized for 3.3 - 3.8 GHz

modulated signal operation. The device supports

pulsed, and linear operation with peak output power

levels to 250 W (54.0 dBm) in an air cavity ceramic

package.

RF_IN/ V_G

RF_OUT/ V_D

Flange

RF_IN/ V_G

RF_OUT/ V_D

Typical Doherty Performance:

•

3.3-3.7 GHz Evaluation Board

Pin Configuration

WCDMA 3GPP TM1, 10 dB PAR @ 0.01% CCDF.

V_DS= 48 V, I_DQCAR= 300mA, V_GSPK= -4.38 V,

T_CASE= 25°C, P_OUT= 44.7 dBm

RF_IN/ V_G

RF_OUT/ V_D

RF_IN/ V_G

RF_OUT/ V_D

Flange¹

RF Input / Gate (Carrier)

RF Output / Drain (Carrier)

RF Input / Gate (Peaking)

RF Output / Drain (Peaking)

Ground / Source

Frequency

(GHz)

Output PAR ACPR

_D(%)

(dB)

(dBc)

-27.2

-33.0

-30.3

3.3

3.5

3.7

14.2

15.7

15.3

45.5

45.0

47.0

8.3

8.0

1. The flange on the package bottom must be connected to RF,

DC and thermal ground.

•

3.4-3.8 GHz Evaluation Board

WCDMA 3GPP TM1, 10 dB PAR @ 0.01% CCDF.

V_DS= 48 V, I_DQCAR= 300mA, V_GSPK= -4.38 V,

T_CASE= 25°C, P_OUT= 44.7 dBm

Ordering Information

Frequency

(GHz)

Output PAR ACPR

Part Number

Package

_D(%)

(dB)

(dBc)

-28.9

-31.5

-32.3

MAPC-A2517-AS000

MAPC-A2517-ASTR1

MAPC-A2517-ASSB1

Bulk Quantity

Tape and Reel

Sample Board

3.4

3.6

3.8

15.3

15.8

14.7

44.5

47.9

44.2

8.3

7.9

8.6

* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.

MACOM Technology Solutions Inc. (MACOM ) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

For further information and support please visit:

https://www.macom.com/support

DC-0028054

12 3 4 5 6 7...9

中文翻译

下载PDF

与MAPC-A2517相关器件

型号	品牌	获取价格	描述	数据表
MAPC-A2519	MACOM	获取价格	GaN Amplifier 50 V, 90 W AVG
MAPC-A2520	MACOM	获取价格	GaN Amplifier 50 V, 30 W AVG
MAPC-C22440	MACOM	获取价格	Thermally Enhanced GaN Amplifier 400 W, 48 V, 2110 - 2200 MHz
MAPCGM0001	TE	获取价格	1.0-1.9 GHz Phase Shifter
MAPCGM0001-DIE	TE	获取价格	Phase Shifter 1.0-1.9 GHz
MAPCGM0002	TE	获取价格	Phase Shifter 3.5-6.0 GHz
MAPCGM0002-DIE	TE	获取价格	3.5-6.0 GHz Phase Shifter
MAPCGM0003	TE	获取价格	S-Band Phase Shifter 2.3-4.1 GHz
MAPCGM0003-DIE	TE	获取价格	2.3-4.1 GHz Phase Shifter
MAPCGM0004-DIE	TE	获取价格	5-Bit Digital Phase Shifter 6.0-18.0 GHz