GaN Amplifier 50 V, 90 W
3.7 - 4.0 GHz
MAPC-A2011-B
Rev. V1
Features
•
•
Optimized for Cellular Base Station Applications
Designed for Digital Predistortion Error
Correction Systems
•
High Terminal Impedances for Broadband
Performance
7.0 x 6.5 mm DFN
•
•
50 V Operation
Compatible with MACOM Power Management
Bias Controller/Sequencer MABC-11040
100 % RF Tested
Functional Schematic
•
•
RoHS* Compliant
Description
RFIN
/
RFOUT
VD
/
/
1
2
3
4
5
6
VG
The MAPC-A2011-B is a high power GaN on Silicon
Carbide HEMT D-mode amplifier designed for base
station applications and optimized for 3.7 - 4.0 GHz
modulated signal operation. This device supports
pulsed and linear operation with peak output power
levels to 90W (49.5 dBm) in an 7.0 x 6.5mm DFN
package.
N/C
N/C
7
Pad
RFOUT
VD
RFIN
VG
/
Typical RF Performance
•
WCDMA 3GPP TM1 64 DPCH 9.9 dB PAR @
0.01% CCDF, VDS = 50 V, IDQCAR = 100 mA,
VGSPK = -4.0 V, TCA = 25°C, POUT = 40 dBm.
Pin Configuration
1
2,5
4
RFIN / VG
N/C
RF Input / Gate (Carrier)
No Connection
Frequency
(GHz)
Output PAR
(dB)
ACPR
(dBc)
3.70
3.85
4.00
15.2
15.3
14.7
44
43
42
7.9
8.5
8.7
-32
-37
-41
RFOUT / VD
RFIN / VG
RF Output / Drain (Carrier)
RF Input / Gate (Peaking)
3
6
7
RFOUT / VD RF Output / Drain (Peaking)
Pad1
Ground / Source
1. The pad on the package bottom must be connected to RF, DC
and thermal ground.
Ordering Information
Part Number
Package
MAPC-A2011-BD000
MAPC-A2011-BDTR1
MAPC-A2011-BDSB1
Bulk Quantity
Tape and Reel
Doherty Sample Board
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.
1
MACOM Technology Solutions Inc. (MACOM ) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
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https://www.macom.com/support
DC-0030485