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MA3J744 PDF预览

MA3J744

更新时间: 2024-11-11 22:14:19
品牌 Logo 应用领域
松下 - PANASONIC 整流二极管光电二极管
页数 文件大小 规格书
2页 46K
描述
Silicon epitaxial planar type

MA3J744 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-79包装说明:R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.84Is Samacsys:N
其他特性:HIGH SPEED SWITCH配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.55 VJESD-30 代码:R-PDSO-F3
JESD-609代码:e6湿度敏感等级:1
最大非重复峰值正向电流:1 A元件数量:1
端子数量:3最高工作温度:150 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:30 V最大反向恢复时间:0.003 µs
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Tin/Bismuth (Sn/Bi)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MA3J744 数据手册

 浏览型号MA3J744的Datasheet PDF文件第2页 
Schottky Barrier Diodes (SBD)  
MA3J744  
Silicon epitaxial planar type  
Unit : mm  
For super-high speed switching circuit  
For small current rectification  
2.1 0.1  
0.425  
1.25 0.1  
0.425  
1
2
I Features  
3
Small S-mini type package allowing high-density mounting  
Allowing to rectify under (IF(AV) = 200 mA) condition  
I Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
VR  
Rating  
30  
Unit  
V
Reverse voltage (DC)  
Repetitive peak reverse voltage  
Average forward current  
Peak forward current  
VRRM  
IF(AV)  
IFM  
30  
V
1 : Anode  
2 : NC  
3 : Cathode  
EIAJ : SC-70  
200  
300  
1
mA  
mA  
A
Flat S- Mini Type Package (3-pin)  
Non-repetitive peak forward  
surge current*  
IFSM  
Marking Symbol: M1M  
Internal Connection  
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
Tstg  
55 to +150  
Note)  
*
: The peak-to-peak value in one cycle of 50 Hz sine-wave  
(non-repetitive)  
1
2
3
I Electrical Characteristics Ta = 25°C  
Parameter  
Reverse current (DC)  
Forward voltage (DC)  
Terminal capacitance  
Reverse recovery time*  
Symbol  
Conditions  
Min  
Typ  
Max  
50  
Unit  
µA  
V
IR  
VF  
Ct  
trr  
VR = 30 V  
IF = 200 mA  
0.55  
VR = 0 V, f = 1 MHz  
30  
3
pF  
ns  
IF = IR = 100 mA  
Irr = 10 mA, RL = 100 Ω  
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a  
human body and the leakage of current from the operating equipment.  
2. Rated input/output frequency: 1 000 MHz  
3. * : trr measuring instrument  
Bias Application Unit N-50BU  
Input Pulse  
tp  
Output Pulse  
trr  
tr  
t
10%  
IF  
t
A
90%  
VR  
Irr = 10 mA  
tp = 2 µs  
tr = 0.35 ns  
δ = 0.05  
IF = 100 mA  
IR = 100 mA  
RL = 100 Ω  
Pulse Generator  
(PG-10N)  
Rs = 50 Ω  
W.F.Analyzer  
(SAS-8130)  
Ri = 50 Ω  
1

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