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MA3S132A PDF预览

MA3S132A

更新时间: 2024-09-22 21:55:11
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
4页 106K
描述
Silicon epitaxial planar type

MA3S132A 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-81包装说明:R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.81配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.2 VJESD-30 代码:R-PDSO-F3
JESD-609代码:e6湿度敏感等级:1
最大非重复峰值正向电流:0.5 A元件数量:1
端子数量:3最高工作温度:150 °C
最大输出电流:0.1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:80 V最大反向恢复时间:0.003 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Tin/Bismuth (Sn/Bi)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MA3S132A 数据手册

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Switching Diodes  
MA3S132A (MA132A), MA3S132K (MA132K)  
Silicon epitaxial planar type  
Unit: mm  
0.28 0.05  
+0.05  
0.12  
–0.02  
For switching circuits  
3
Features  
1
2
Short reverse recovery time trr  
Small terminal capacitance Ct  
Allowing high-density mounting  
0.28 0.05  
(0.51)  
(0.51)  
(0.80) (0.80)  
+0.05  
+0.05  
–0.03  
0.60  
1.60  
–0.03  
3˚  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Reverse voltage  
Symbol  
VR  
Rating  
80  
Unit  
V
MA3S132A MA3S132K  
1
2
3
Cathode  
N.C.  
Anode  
Anode  
N.C.  
Cathode  
Maximum peak reverse voltage  
Forward current  
VRM  
IF  
80  
V
EIAJ: SC-81  
SSMini3-F2 Package  
100  
225  
500  
mA  
mA  
mA  
Peak forward current  
IFM  
Marking Symbol:  
Non-repetitive peak forward  
surge current *  
IFSM  
MA3S132A: MB MA3S132K: MI  
Internal Connection  
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
3
3
Tstg  
55 to +150  
Note) : t = 1 s  
*
1
2
1
2
K
A
Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Forward voltage  
Symbol  
Conditions  
IF = 100 mA  
Min  
Typ  
Max  
Unit  
V
VF  
VR  
IR  
1.2  
Reverse voltage  
IR = 100 µA  
VR = 75 V  
80  
V
Reverse current  
100  
2
nA  
pF  
ns  
Terminal capacitance  
Reverse recovery time *  
Ct  
trr  
VR = 0 V, f = 1 MHz  
IF = 10 mA, VR = 6 V  
Irr = 0.1 IR , RL = 100 Ω  
3
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.  
2. Absolute frequency of input and output is 100 MHz.  
3. : trr measurement circuit  
*
Bias Application Unit (N-50BU)  
Input Pulse  
tp  
Output Pulse  
trr  
tr  
t
10%  
IF  
t
A
90%  
VR  
Irr = 0.1 IR  
tp = 2 µs  
tr = 0.35 ns  
δ = 0.05  
IF = 10 mA  
VR = 6 V  
RL = 100 Ω  
Pulse Generator  
(PG-10N)  
Wave Form Analyzer  
(SAS-8130)  
Rs = 50 Ω  
Ri = 50 Ω  
Note) The part numbers in the parenthesis show conventional part number.  
Publication date: March 2004  
SKF00023BED  
1

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