Datasheet > KMB3D5PS30QA

KMB3D5PS30QA

更新时间： 2024-11-12 03:28:23

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
5页	469K
描述
SBD and P-Ch Trench MOSFET

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中文翻译

获取价格

数据手册

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KMB3D5PS30QA 数据手册

SEMICONDUCTOR

KMB3D5PS30QA

SBD and P-Ch Trench MOSFET

TECHNICAL DATA

GENERAL DESCRIPTION

It is particularly suited for switching such as DC/DC Converters.

It is driven as low as 4.5V and fast switching, high efficiency.

FEATURES

V_DSS=-30V, I_D=-3.5A.

Drain-Source ON Resistance.

R_DS(ON)=85m (Max.) @ V_GS=-10V

DIM MILLIMETERS

4.85 0.2

_DS(ON)=180m (Max.) @ V_GS=-4.5V

3.94 + 0.2

6.02 0.3

0.4 + 0.1

0.15+0.1/-0.05

B1 B2

1.63+ 0.2

0.65 0.2

1.27

MOSFET Maximum Ratings (Ta=25 Unless otherwise noted)

0.20+0.1/-0.05

CHARACTERISTIC

Drain Source Voltage

SYMBOL PATING UNIT

V_DSS

V_GSS

I_D*

-30

Gate Source Voltage

-3.5

-20

FLP-8

Drain Current

I_DP

Pulsed

1.4

P_D*

Drain Power Dissipation

Marking

100

Type Name

T_j

Maximum Junction Temperature

Storage Temperature Range

150

-55~150

T_stg

KMB3D5PS

30QA

R_thJA

Thermal Resistance, Junction to Ambient

Note : *Sorface Mounted on FR4 Board

Lot No.

702

Schottky Diode Maximum Ratings (Ta=25 Unless otherwise noted)

CHARACTERISTIC

Repetitive Peak Reverse Voltage

Average Forward Current

SYMBOL PATING UNIT

V_RRM

I_F

1.4

PIN CONNECTION (TOP VIEW)

2007. 8. 13

Revision No : 2

1/5

12 3 4 5

中文翻译

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