Datasheet > KMB6D0DN35QB

KMB6D0DN35QB

更新时间： 2024-09-25 11:57:35

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
5页	897K
描述
Dual N-Ch Trench MOSFET

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中文翻译

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KMB6D0DN35QB 数据手册

SEMICONDUCTOR

KMB6D0DN35QB

Dual N-Ch Trench MOSFET

TECHNICAL DATA

GENERAL DESCRIPTION

This Trench MOSFET has better characteristics, such as fast switching

time, low on resistance, low gate charge and excellent avalanche

characteristics. It is mainly suitable for DC/DC Converters.

FEATURES

· V_DSS=35V, I_D=6A.

· Drain-Source ON Resistance.

R_DS(ON)=28mΩ (Max.) @V_GS=10V

R_DS(ON)=42mΩ (Max.) @V_GS=4.5V

· Super High Dense Cell Design

· Very fast switching

MAXIMUM RATING (Ta=25℃ Unless otherwise noted)

CHARACTERISTIC

Drain Source Voltage

SYMBOL

V_DSS

V_GSS

I_D*

PATING UNIT

35V

±20

Gate Source Voltage

T_a=25℃

Drain Current

I_DP

Pulsed(Note1)

I_S

Drain Source Diode Forward Current

1.3

P_D*

T_j

Drain Power Dissipation

T_a=25℃

Maximum Junction Temperature

Storage Temperature Range

-50~150

62.5

℃

℃/W

T_stg

R_thJA

Thermal Resistance, Junction to Ambient

* : Surface Mounted on FR4 Board (25mm×25mm, 1.5t)

2011. 2. 25

Revision No : 0

1/5

12 3 4 5

中文翻译

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