Datasheet > KMB3D9N40TA

KMB3D9N40TA

更新时间： 2024-09-23 11:30:47

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
5页	525K
描述
N-Ch Trench MOSFET

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KMB3D9N40TA 数据手册

SEMICONDUCTOR

KMB3D9N40TA

TECHNICAL DATA

N-Ch Trench MOSFET

General Description

This Trench MOSFET has better characteristics, such as fast switching

time, low on resistance, low gate charge and excellent avalanche

characteristics. It is mainly suitable for Load switch and Back-Light

Inverter.

DIM MILLIMETERS

2.9+0.2

1.6+0.2/-0.1

0.70+0.05

0.4+0.1

FEATURES

2.8+0.2/-0.3

1.9+0.2

V_DSS=40V, I_D=3.9A

0.95

0.16+0.05

Drain-Source ON Resistance

R_DS(ON)=45m (Max.) @ V_GS=10V

R_DS(ON)=58m (Max.) @ V_GS=4.5V

Super High Dense Cell Design

0.00-0.10

0.25+0.25/-0.15

0.60

0.55

TSM

MAXIMUM RATING (Ta=25

)

CHARACTERISTIC

SYMBOL

V_DSS

N-Ch

UNIT

Marking

Drain-Source Voltage

Gate-Source Voltage

Lot No.

V_GSS

3.9

Type Name

A 2

DC@Ta=25

DC@Ta=70

Pulsed

I_D

Drain Current

3.1

I_DP

I_S

Drain-Source-Diode Forward Current

0.8

1.25

0.8

Ta=25

P_D

Drain Power Dissipation

Ta=70

T_j

T_stg

Maximum Junction Temperature

150

Storage Temperature Range

-55 150

100

R_thJA

5sec

Thermal Resistance, Junction to Ambient

Note > *Surface Mounted on 1 1 FR4 Board, t

PIN CONNECTION (TOP VIEW)

2008. 6. 10

Revision No : 0

1/5

12 3 4 5

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