Datasheet > KMB6D0DN30QA_08

KMB6D0DN30QA_08

更新时间： 2024-09-25 11:30:47

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
5页	59K
描述
Dual N-Ch Trench MOSFET

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中文翻译

获取价格

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KMB6D0DN30QA_08 数据手册

SEMICONDUCTOR

KMB6D0DN30QA

TECHNICAL DATA

Dual N-Ch Trench MOSFET

GENERAL DESCRIPTION

This Trench MOSFET has better characteristics, such as fast switching

time, low on resistance, low gate charge and excellent avalanche

characteristics. It is mainly suitable for portable equipment and DC-DC

Converter Applications.

FEATURES

V_DSS=30V, I_D=6A.

DIM MILLIMETERS

4.85 0.2

Drain-Source ON Resistance.

R_DS(ON)=28m (Max.) @V_GS=10V

R_DS(ON)=42m (Max.) @V_GS=4.5V

Super High Dense Cell Design

High Power and Current Handing Capability

3.94 0.2

6.02 0.3

0.4 0.1

0.15+0.1/-0.05

B1 B2

1.63

0.2

0.65 0.2

1.27

0.20+0.1/-0.05

MAXIMUM RATING (Ta=25 Unless otherwise noted)

CHARACTERISTIC

Drain Source Voltage

SYMBOL

V_DSS

V_GSS

I_D*

PATING UNIT

FLP-8

Gate Source Voltage

Drain Current

I_DP

Pulsed

I_S

Drain Source Diode Forward Current

Drain Power Dissipation

1.7

P_D*

T_j

Maximum Junction Temperature

150

-50~150

62.5

KMB6D0DN

30QA

T_stg

Storage Temperature Range

R_thJA

Thermal Resistance, Junction to Ambient

Note> *Surface Mounted on FR4 Board, t 10sec.

PIN CONNECTION (TOP VIEW)

2008. 3. 21

Revision No : 1

1/5

12 3 4 5

中文翻译

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