JDV2S05E

更新时间： 2024-10-30 03:21:59

品牌	Logo	应用领域
东芝 - TOSHIBA		二极管变容二极管光电二极管
页数	文件大小	规格书
1页	55K
描述
VCO for UHF band

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

JDV2S05E 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	SOD	包装说明：	1-1G1A, 2 PIN
针数：	2	Reach Compliance Code：	unknown
风险等级：	5.79	Is Samacsys：	N
配置：	SINGLE	二极管电容容差：	8.33%
最小二极管电容比：	1.7	标称二极管电容：	4.2 pF
二极管元件材料：	SILICON	二极管类型：	VARIABLE CAPACITANCE DIODE
频带：	ULTRA HIGH FREQUENCY	JESD-30 代码：	R-PDSO-F2
元件数量：	1	端子数量：	2
最高工作温度：	125 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	240	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	FLAT
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

JDV2S05E 数据手册

JDV2S05E

TOSHIBA Diode Silicon Epitaxial Planar Type

J D V 2 S 0 5 E

VCO for UHF band

•

Small Package

1V 4V

Low Series Resistance : r = 0.30 Ω (typ.)

High Capacitance Ratio: C /C = 1.9 (typ.)

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Reverse voltage

125

Junction temperature

Storage temperature range

°C

−55~125

stg

Weight: 0.0014 g

000707EAA1

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general

can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the

buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and

to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or

damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the

most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling

Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..

• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal

equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are

neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or

failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy

control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control

instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document

shall be made at the customer’s own risk.

• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by

TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its

use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or

others.

• The information contained herein is subject to change without notice.

2000-09-11 1/3

中文翻译

下载PDF

与JDV2S05E相关器件

型号	品牌	获取价格	描述	数据表
JDV2S05E(TPH3)	TOSHIBA	获取价格	VARACTOR DIODE,SINGLE,4.2PF C(T),EMD2
JDV2S05E_07	TOSHIBA	获取价格	Silicon Epitaxial Planar Type VCO for UHF band
JDV2S05FS	TOSHIBA	获取价格	Silicon Epitaxial Planar Type VCO for the UHF band
JDV2S05S	TOSHIBA	获取价格	VCO for UHF band
JDV2S06FS	TOSHIBA	获取价格	DIODE UHF BAND, 16 pF, SILICON, VARIABLE CAPACITANCE DIODE, FSC, 1-1L1A, 2 PIN, Variable C
JDV2S06S	TOSHIBA	获取价格	TOSHIBA DIODE Silicon Epitaxial Planar Type
JDV2S07FS	TOSHIBA	获取价格	VCO for UHF Band Radio
JDV2S07S	TOSHIBA	获取价格	VCO for UHF Band Radio
JDV2S08FS	TOSHIBA	获取价格	VCO for the UHF band
JDV2S08S	TOSHIBA	获取价格	VCO for UHF Band Radio

与JDV2S05E相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

16
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

19
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

43
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

50

产品中心

服务支持

精选活动

关于我们

帮助中心

JDV2S05E

JDV2S05E 技术参数

JDV2S05E 数据手册

与JDV2S05E相关器件

与JDV2S05E相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

JDV2S05E

JDV2S05E 技术参数

JDV2S05E 数据手册

与JDV2S05E相关器件

与JDV2S05E相关文章

您还可以找

您在本页遇到什么问题？