Datasheet > IXTT500N04T2

IXTT500N04T2

更新时间： 2024-11-05 20:02:31

品牌	Logo	应用领域
力特 - LITTELFUSE		局域网开关脉冲晶体管
页数	文件大小	规格书
7页	188K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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IXTT500N04T2 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.74
Base Number Matches：	1

IXTT500N04T2 数据手册

Advance Technical Information

TrenchT2^TM

Power MOSFET

V_DSS= 40V

I_D25= 500A

R_DS(on)≤ 1.6mΩ

IXTH500N04T2

IXTT500N04T2

N-Channel Enhancement Mode

Avalanche Rated

TO-247 (IXTH)

Fast Intrinsic Diode

D (Tab)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 175°C

T_J= 25°C to 175°C, R_GS= 1MΩ

V_DGR

TO-268 (IXTT)

V_GSM

Transient

± 20

I_D25

I_LRMS

I_DM

T_C= 25°C (Chip Capability)

Lead Current Limit, RMS

500

160

T_C= 25°C, Pulse Width Limited by T_JM

1250

D (Tab)

I_A

T_C= 25°C

100

800

E_AS

P_D

G = Gate

= Drain

S = Source

Tab = Drain

1000

T_J

-55 ... +175

175

°C

T_JM

T_stg

Features

-55 ... +175

^zInternational Standard Packages

^z175°C Operating Temperature

^zHigh Current Handling Capability

^zAvalanche Rated

T_L

T_sold

1.6mm (0.062in.) from Case for 10s

Plastic Body for 10 seconds

300

260

°C

M_d

Mounting Torque (TO-247)

1.13 / 10

Nm/lb.in.

^zFast Intrinsic Diode

Weight

TO-247

TO-268

Low R_DS(on)

Advantages

Easy to Mount

Space Savings

High Power Density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C Unless Otherwise Specified)

Min.

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 250μA

V_GS= ± 20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

1.5

3.5

Applications

±200 nA

• Synchronous Buck Converters

• High Current Switching Power

Supplies

I_DSS

10 μA

T_J= 150°C

V_GS= 10V, I_D= 100A, Notes 1 & 2

750 μA

R_DS(on)

1.6 mΩ

• Battery Powered Electric Motors

• Resonant-Mode Power Supplies

• Electronics Ballast Application

• Class D Audio Amplifiers

DS100218(12/09)

12 3 4 5 6 7

中文翻译

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