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IXTT500N04T2 PDF预览

IXTT500N04T2

更新时间: 2024-11-06 20:02:31
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网开关脉冲晶体管
页数 文件大小 规格书
7页 188K
描述
Power Field-Effect Transistor,

IXTT500N04T2 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.74
Base Number Matches:1

IXTT500N04T2 数据手册

 浏览型号IXTT500N04T2的Datasheet PDF文件第2页浏览型号IXTT500N04T2的Datasheet PDF文件第3页浏览型号IXTT500N04T2的Datasheet PDF文件第4页浏览型号IXTT500N04T2的Datasheet PDF文件第5页浏览型号IXTT500N04T2的Datasheet PDF文件第6页浏览型号IXTT500N04T2的Datasheet PDF文件第7页 
Advance Technical Information  
TrenchT2TM  
Power MOSFET  
VDSS = 40V  
ID25 = 500A  
RDS(on) 1.6mΩ  
IXTH500N04T2  
IXTT500N04T2  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-247 (IXTH)  
Fast Intrinsic Diode  
G
D
D (Tab)  
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
40  
40  
V
V
VDGR  
TO-268 (IXTT)  
VGSM  
Transient  
± 20  
V
ID25  
ILRMS  
IDM  
TC = 25°C (Chip Capability)  
Lead Current Limit, RMS  
500  
160  
A
A
A
G
S
TC = 25°C, Pulse Width Limited by TJM  
1250  
D (Tab)  
IA  
TC = 25°C  
TC = 25°C  
TC = 25°C  
100  
800  
A
mJ  
W
EAS  
PD  
G = Gate  
D
= Drain  
S = Source  
Tab = Drain  
1000  
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
TJM  
Tstg  
Features  
-55 ... +175  
z International Standard Packages  
z 175°C Operating Temperature  
z High Current Handling Capability  
z Avalanche Rated  
TL  
Tsold  
1.6mm (0.062in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
Md  
Mounting Torque (TO-247)  
1.13 / 10  
Nm/lb.in.  
z Fast Intrinsic Diode  
Weight  
TO-247  
TO-268  
6
4
g
g
z
Low RDS(on)  
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 250μA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS= 0V  
40  
V
V
1.5  
3.5  
Applications  
±200 nA  
Synchronous Buck Converters  
High Current Switching Power  
Supplies  
IDSS  
10 μA  
TJ = 150°C  
VGS = 10V, ID = 100A, Notes 1 & 2  
750 μA  
RDS(on)  
1.6 mΩ  
Battery Powered Electric Motors  
Resonant-Mode Power Supplies  
Electronics Ballast Application  
Class D Audio Amplifiers  
DS100218(12/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  

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