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IXTT64N25P PDF预览

IXTT64N25P

更新时间: 2024-11-17 22:11:03
品牌 Logo 应用领域
IXYS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
5页 578K
描述
PolarHT Power MOSFET

IXTT64N25P 技术参数

是否无铅: 不含铅生命周期:Transferred
零件包装代码:TO-268AA包装说明:SMALL OUTLINE, R-PSSO-G2
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.76
Is Samacsys:N其他特性:AVALANCHE RATED
雪崩能效等级(Eas):1000 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:250 V
最大漏极电流 (ID):64 A最大漏源导通电阻:0.049 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-268AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):160 A认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXTT64N25P 数据手册

 浏览型号IXTT64N25P的Datasheet PDF文件第2页浏览型号IXTT64N25P的Datasheet PDF文件第3页浏览型号IXTT64N25P的Datasheet PDF文件第4页浏览型号IXTT64N25P的Datasheet PDF文件第5页 
IXTQ 64N25P VDSS  
IXTT 64N25P ID25  
= 250 V  
= 64 A  
PolarHTTM  
Power MOSFET  
RDS(on) = 48 mΩ  
N-Channel Enhancement Mode  
Preliminary Data Sheet  
TO-3P(IXTQ)  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
T
= 25°C to 150°C  
250  
250  
V
V
TJJ = 25°C to 150°C; RGS = 1 MΩ  
VGSM  
20  
V
ID25  
IDM  
TC = 25°C  
64  
A
A
G
D
(TAB)  
TC = 25°C, pulse width limited by TJM  
160  
S
IAR  
TC = 25°C  
60  
A
EAR  
EAS  
TC = 25°C  
TC = 25°C  
40  
mJ  
J
TO-268 (IXTT)  
1.0  
dv/dt  
PD  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 4 Ω  
,
10  
V/ns  
G
S
D (TAB)  
TC = 25°C  
400  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
Features  
TL  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
z
International standard packages  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
Md  
Mounting torque  
(TO-3P)  
1.13/10 Nm/lb.in.  
z
z
Weight  
TO-3P  
TO-268  
5.5  
5.0  
g
g
Advantages  
Symbol  
TestConditions  
Characteristic Values  
z
Easy to mount  
Space savings  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
z
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250µA  
VGS = 20 VDC, VDS = 0  
250  
V
V
z
High power density  
2.5  
5.0  
100 nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25 µA  
250 µA  
TJ = 125°C  
PolarHTTM DMOStransistors  
utilize proprietary designs and  
process. US patent is pending.  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Pulse test, t 300 µs, duty cycle d 2 %  
48 mΩ  
DS99120A(02/04)  
© 2004 IXYS All rights reserved  

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