Datasheet > IXTT75N15

IXTT75N15

更新时间： 2024-01-30 04:22:34

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	589K
描述
High Current Power MOSFET N-Channel Enhancement Mode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXTT75N15 数据手册

IXTH 75N15

IXTT 75N15

V_DSS

I_D25

= 150 V

= 75 A

High Current

Power MOSFET

R_DS(on)= 23 mΩ

N-Channel Enhancement Mode

TO-247AD(IXTH)

Symbol

TestConditions

Maximum Ratings

V_DSS

V_DGR

= 25°C to 150°C

150

T^J_J= 25°C to 150°C; R_GS= 1 MΩ

V_GS

V_GSM

Continuous

Transient

(TAB)

I_D25

T_C= 25°C

I_DM

I_AR

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

300

TO-268 (IXTT)

E_AR

E_AS

T_C= 25°C

1.5

(TAB)

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 Ω

V/ns

G = Gate

S = Source

D = Drain

TAB = Drain

P_D

T_C= 25°C

330

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

Features

T_L

1.6 mm (0.062 in.) from case for 10 s

Mounting torque

300

°C

International standard packages

Low R_{DS (on)}HDMOS^TMprocess

Rugged polysilicon gate cell structure

Unclamped Inductive Switching (UIS)

rated

M_d

1.13/10 Nm/lb.in.

Weight

TO-247AD

TO-268

Low package inductance

- easy to drive and to protect

Advantages

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min. Typ.

Max.

Easy to mount

Space savings

V_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 µA

V_DS= V_GS, I_D= 250µA

V_GS= 20 V_DC, V_DS= 0

V_DS= V_DSS

150

2.0

4.0

High power density

100

I_DSS

T_J= 25°C

T_J= 125°C

250

µA

_GS= 0 V

V_GS= 10 V, I_D= 0.5 I_D25

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

R_DS(on)

23 mΩ

DS98948C(05/04)

12 3 4 5

中文翻译

下载PDF

与IXTT75N15相关器件

型号	品牌	获取价格	描述	数据表
IXTT76P10THV	LITTELFUSE	获取价格	Trench P通道MOSFET非常适合“高压侧”开关应用，这些应用可采用简单的接地参考驱
IXTT80N20L	LITTELFUSE	获取价格	当功率MOSFET用于线性模式工作时，相对于传统的开关模式具有相当高的热应力和电应力，这是
IXTT82N25P	IXYS	获取价格	PolarHT Power MOSFET
IXTT82N25P	LITTELFUSE	获取价格	Polar?标准功率MOSFET经过专门定制，可为设计人员提供在性能和成本之间取得最佳平衡
IXTT88N15	IXYS	获取价格	High Current Power MOSFET
IXTT88N30P	IXYS	获取价格	PolarHT Power MOSFET
IXTT88N30P	LITTELFUSE	获取价格	Polar?标准功率MOSFET经过专门定制，可为设计人员提供在性能和成本之间取得最佳平衡
IXTT8P50	IXYS	获取价格	Standard Power MOSFET - P-Channel Enhancement Mode Avalanche Rated
IXTT8P50	LITTELFUSE	获取价格	P通道标准功率MOSFET的额定电压范围为-100V至-600V，并采用业内流行的TO-2
IXTT90P10P	IXYS	获取价格	PolarPTM Power MOSFETs