Datasheet > IXTT82N25P

IXTT82N25P

更新时间： 2024-09-26 22:11:03

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	610K
描述
PolarHT Power MOSFET

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中文翻译

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数据手册
替代型号

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IXTT82N25P 数据手册

PolarHT^TM

Power MOSFET

IXTQ 82N25P

IXTT 82N25P

IXTK 82N25P

V_DSS= 250 V

I_D25= 82

R_DS(on)= 35 mΩ

N-Channel Enhancement Mode

Preliminary Data Sheet

TO-264 (IXTK)

Symbol

TestConditions

Maximum Ratings

V_DSS

V_DGR

= 25°C to 150°C

250

T^J_J= 25°C to 150°C; R_GS= 1 MΩ

V_GSM

(TAB)

I_D25

I_D(RMS)

= 25°C

E^Cxternal lead current limit

TO-3P(IXTQ)

I_DM

I_AR

T_C= 25°C, pulse width limited by T_JM

250

T_C= 25°C

E_AR

E_AS

T_C= 25°C

1.0

(TAB)

dv/dt

P_D

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 4 Ω

V/ns

TO-268 (IXTT)

T_C= 25°C

500

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

D (TAB)

T_L

1.6 mm (0.062 in.) from case for 10 s

Mounting torque

300

°C

G = Gate

S = Source

D = Drain

TAB = Drain

M_d

1.13/10 Nm/lb.in.

Weight

TO-3P

TO-264

TO-268

5.5

5.0

Features

International standard packages

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min. Typ.

Max.

V_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 µA

V_DS= V_GS, I_D= 250µA

V_GS= 20 V_DC, V_DS= 0

250

Advantages

2.5

5.0

Easy to mount

100

Space savings

I_DSS

V_DS= V_DSS

V_GS= 0 V

250

µA

High power density

T_J= 125°C

PolarHT^TMDMOStransistors

utilize proprietary designs and

process. US patent is pending.

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

35 mΩ

DS99121B(04/04)

12 3 4 5

中文翻译

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IXTT82N25P 替代型号

型号	品牌	替代类型	描述	数据表
IXTK82N25P	IXYS	完全替代	PolarHT Power MOSFET
IXTK90N25L2	IXYS	功能相似	LinearL2 Power MOSFET w/Extended FBSOA
IXTQ82N25P	IXYS	功能相似	PolarHT Power MOSFET

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