Datasheet > IXTT88N30P

IXTT88N30P

更新时间： 2024-02-12 12:07:29

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	583K
描述
PolarHT Power MOSFET

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中文翻译

获取价格

数据手册

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IXTT88N30P 数据手册

IXTH 88N30P

IXTT 88N30P

V_DSS= 300 V

I_D25= 88 A

= 40 mΩ

PolarHT^TM

Power MOSFET

R_DS(on)

N-Channel Enhancement Mode

Preliminary Data Sheet

TO-247(IXTH)

Symbol

TestConditions

Maximum Ratings

V_DSS

V_DGR

= 25°C to 150°C

300

T^J_J= 25°C to 150°C; R_GS= 1 MΩ

V_GSM

D (TAB)

I_D25

T_C= 25°C

I_D(RMS)

I_DM

External lead current limit

T_C= 25°C, pulse width limited by T_JM

TO-268 (IXTT)

220

I_AR

T_C= 25°C

E_AR

E_AS

T_C= 25°C

2.0

D (TAB)

dv/dt

P_D

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 4 Ω

V/ns

G = Gate

S = Source

D = Drain

TAB = Drain

T_C= 25°C

600

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

Features

International standard packages

Unclamped Inductive Switching (UIS)

rated

T_L

1.6 mm (0.062 in.) from case for 10 s

Mounting torque

300

°C

M_d

1.13/10 Nm/lb.in.

Low package inductance

- easy to drive and to protect

Weight

TO-247

TO-264

TO-268

Advantages

Easy to mount

Symbol

TestConditions

Characteristic Values

Space savings

(T_J= 25°C, unless otherwise specified)

Min. Typ.

Max.

High power density

V_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 µA

V_DS= V_GS, I_D= 250µA

V_GS= 20 V_DC, V_DS= 0

300

2.5

5.0

100 nA

I_DSS

V_DS= V_DSS

V_GS= 0 V

25 µA

250 µA

T_J= 125°C

PolarHT^TMDMOStransistors

utilize proprietary designs and

process. US patent is pending.

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

40 mΩ

DS99129A(01/04)

12 3 4 5

中文翻译

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