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IXTT88N15 PDF预览

IXTT88N15

更新时间: 2024-11-18 03:13:39
品牌 Logo 应用领域
IXYS 晶体晶体管开关脉冲
页数 文件大小 规格书
2页 115K
描述
High Current Power MOSFET

IXTT88N15 技术参数

是否无铅: 不含铅生命周期:Transferred
零件包装代码:TO-268AA包装说明:SMALL OUTLINE, R-PSSO-G2
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.76
雪崩能效等级(Eas):1500 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:150 V
最大漏极电流 (ID):88 A最大漏源导通电阻:0.022 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-268AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):352 A认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXTT88N15 数据手册

 浏览型号IXTT88N15的Datasheet PDF文件第2页 
Advance Technical Information  
IXTH 88N15  
IXTT 88N15  
VDSS  
ID25  
RDS(on)  
= 150  
V
A
High Current  
Power MOSFET  
=
=
88  
22 mΩ  
N-Channel Enhancement Mode  
TO-247AD(IXTH)  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
150  
150  
V
V
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
(TAB)  
ID25  
TC = 25°C  
88  
A
ID M  
IAR  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
352  
88  
A
A
TO-268 (IXTT) Case Style  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
50  
mJ  
J
G
1.5  
(TAB)  
S
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
,
5
V/ns  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
PD  
TC = 25°C  
400  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
z
TL  
1.6 mm (0.062 in.) from case for 10 s  
Mounting torque  
300  
°C  
International standard packages  
Low RDS (on) HDMOSTM process  
Rugged polysilicon gate cell structure  
Unclamped Inductive Switching (UIS)  
rated  
z
z
z
Md  
1.13/10 Nm/lb.in.  
Weight  
TO-247AD  
TO-268  
6
4
g
g
z
Low package inductance  
- easy to drive and to protect  
Advantages  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
z
Easy to mount  
Space savings  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250µA  
VGS = ±20 VDC, VDS = 0  
VDS = VDSS  
150  
V
V
z
z
2.0  
4.0  
High power density  
±100  
nA  
IDSS  
TJ = 25°C  
TJ = 125°C  
25  
1
µA  
mA  
V
GS = 0 V  
VGS = 10 V, ID = 0.5 ID25  
Pulse test, t 300 µs, duty cycle d 2 %  
RDS(on)  
22 mΩ  
DS99034(04/03)  
© 2003 IXYS All rights reserved  

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