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IXTT50P10 PDF预览

IXTT50P10

更新时间: 2024-11-05 21:22:27
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
5页 120K
描述
Power Field-Effect Transistor,

IXTT50P10 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.74
Base Number Matches:1

IXTT50P10 数据手册

 浏览型号IXTT50P10的Datasheet PDF文件第2页浏览型号IXTT50P10的Datasheet PDF文件第3页浏览型号IXTT50P10的Datasheet PDF文件第4页浏览型号IXTT50P10的Datasheet PDF文件第5页 
VDSS = - 100V  
ID25 = - 50A  
IXTH50P10  
IXTT50P10  
Standard  
Power MOSFET  
RDS(on)  
55mΩ  
P-Channel Enhancement Mode  
Avalanche Rated  
TO-247 (IXTH)  
(TAB)  
G
D
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
-100  
-100  
V
V
VDGR  
TO-268 (IXTT)  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
- 50  
A
A
G
- 200  
S
IA  
TC = 25°C  
TC = 25°C  
- 50  
30  
A
(TAB)  
EAS  
mJ  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
PD  
TC = 25°C  
300  
W
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
°C  
°C  
°C  
Features  
TL  
TSOLD  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10s  
300  
260  
°C  
°C  
z International standard packages  
JEDEC TO-247 AD  
Md  
Mounting torque (TO-247)  
1.13 / 10  
Nm/lb.in.  
z Low RDS(ON) HDMOSTM process  
z Rugged polysilicon gate cell structure  
z Unclamped Inductive Switching (UIS)  
rated  
Weight  
TO-247  
TO-268  
6
5
g
g
z Low package inductance (< 5nH)  
- easy to drive and to protect  
Applications  
z
High side switching  
Push-pull amplifiers  
DC Choppers  
Automatic test equipment  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
z
(TJ = 25°C, unless otherwise specified)  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250 μA  
VDS = VGS, ID = - 250μA  
VGS = ±20V, VDS = 0V  
-100  
- 3.0  
V
z
- 5.0  
V
Advantages  
±100 nA  
z
Easy to mount with 1 screw  
IDSS  
VDS = 0.8 • VDSS  
VGS = 0V  
- 25 μA  
-1 mA  
(isolated mounting screw hole)  
Space savings  
High power density  
TJ = 125°C  
z
z
RDS(on)  
VGS = -10V, ID = 0.5 • ID25, Note 1  
55 mΩ  
DS98905E(6/08)  
© 2008 IXYS CORPORATION, All rights reserved  

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