Datasheet > IXTT50P10

IXTT50P10

更新时间： 2024-11-20 21:22:27

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
5页	120K
描述
Power Field-Effect Transistor,

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中文翻译

获取价格

技术参数
数据手册

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IXTT50P10 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.74
Base Number Matches：	1

IXTT50P10 数据手册

V_DSS= - 100V

I_D25= - 50A

IXTH50P10

IXTT50P10

Standard

Power MOSFET

R_DS(on)

≤

55mΩ

P-Channel Enhancement Mode

Avalanche Rated

TO-247 (IXTH)

(TAB)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

-100

V_DGR

TO-268 (IXTT)

V_GSS

V_GSM

Continuous

Transient

±20

±30

I_D25

I_DM

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

- 50

- 200

I_A

T_C= 25°C

- 50

(TAB)

E_AS

G = Gate

S = Source

D = Drain

TAB = Drain

P_D

T_C= 25°C

300

T_J

T_JM

T_stg

- 55 ... +150

150

- 55 ... +150

°C

Features

T_L

T_SOLD

1.6mm (0.062 in.) from case for 10s

Plastic body for 10s

300

260

°C

^zInternational standard packages

JEDEC TO-247 AD

M_d

Mounting torque (TO-247)

1.13 / 10

Nm/lb.in.

^zLow R_DS(ON)HDMOS^TMprocess

^zRugged polysilicon gate cell structure

^zUnclamped Inductive Switching (UIS)

rated

Weight

TO-247

TO-268

^zLow package inductance (< 5nH)

- easy to drive and to protect

Applications

High side switching

Push-pull amplifiers

DC Choppers

Automatic test equipment

Symbol

Test Conditions

Characteristic Values

Min. Typ. Max.

(T_J= 25°C, unless otherwise specified)

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= - 250 μA

V_DS= V_GS, I_D= - 250μA

V_GS= ±20V, V_DS= 0V

-100

- 3.0

- 5.0

Advantages

±100 nA

Easy to mount with 1 screw

I_DSS

V_DS= 0.8 • V_DSS

V_GS= 0V

- 25 μA

-1 mA

(isolated mounting screw hole)

Space savings

High power density

T_J= 125°C

R_DS(on)

V_GS= -10V, I_D= 0.5 • I_D25, Note 1

55 mΩ

DS98905E(6/08)

12 3 4 5

中文翻译

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