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IXTP8N70X2M PDF预览

IXTP8N70X2M

更新时间: 2024-11-05 20:04:27
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
5页 142K
描述
Power Field-Effect Transistor,

IXTP8N70X2M 技术参数

是否无铅: 不含铅生命周期:Transferred
Reach Compliance Code:compliant风险等级:8.36
Base Number Matches:1

IXTP8N70X2M 数据手册

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Advance Technical Information  
X2-Class  
Power MOSFET  
VDSS = 700V  
ID25 = 8A  
IXTP8N70X2M  
RDS(on) 550m  
(Electrically Isolated Tab)  
N-Channel Enhancement Mode  
OVERMOLDED  
TO-220  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
700  
700  
V
V
VDGR  
TJ = 25C to 150C, RGS = 1M  
G
D
S
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G = Gate  
S = Source  
D = Drain  
ID25  
IDM  
TC = 25C, Limited by TJM  
TC = 25C, Pulse Width Limited by TJM  
8
A
A
16  
IA  
TC = 25C  
TC = 25C  
4
A
EAS  
250  
mJ  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
50  
32  
V/ns  
W
Features  
International Standard Package  
Plastic Overmolded Tab  
Low RDS(ON) and QG  
Avalanche Rated  
Low Package Inductance  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Advantages  
Md  
Mounting Torque  
1.13 / 10  
2.5  
Nm/lb.in  
g
Weight  
High Power Density  
Easy to Mount  
Space Savings  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
700  
V
V
3.0  
5.0  
100 nA  
IDSS  
10 A  
TJ = 125C  
250 A  
RDS(on)  
VGS = 10V, ID = 4A, Note 1  
550 m  
DS100755A(1/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  

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