Datasheet > IXTP230N04T4

IXTP230N04T4

更新时间： 2024-11-05 19:19:03

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
6页	177K
描述
Power Field-Effect Transistor

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中文翻译

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技术参数
数据手册

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IXTP230N04T4 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.72	Base Number Matches：	1

IXTP230N04T4 数据手册

Advance Technical Information

TrenchT4^TM

Power MOSFET

V_DSS= 40V

I_D25= 230A

R_DS(on) 2.9m

IXTA230N04T4

IXTP230N04T4

N-Channel Enhancement Mode

Avalanche Rated

TO-263 AA (IXTA)

Symbol

V_DSS

Test Conditions

Maximum Ratings

D (Tab)

T_J= 25C to 175C

V_DGR

T_J= 25C to 175C, R_GS= 1M

TO-220AB (IXTP)

V_GSM

Transient

15

I_D25

I_LRMS

T_C= 25C

Lead Current Limit, RMS

230

160

I_DM

T_C= 25C, Pulse Width Limited by T_JM

700

D (Tab)

= Drain

I_A

E_AS

T_C= 25C

100

600

G = Gate

P_D

T_C= 25C

340

S = Source

Tab = Drain

T_J

T_JM

T_stg

-55 ... +175

175

-55 ... +175

C

Features

^International Standard Packages

^175°C Operating Temperature

^High Current Handling Capability

^Avalanche Rated

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

M_d

Mounting Torque

(TO-220)

1.13 / 10

Nm/lb.in.

Weight

TO-263

TO-220

2.5

3.0



Low R_DS(on)

Advantages



Easy to Mount

Space Savings

High Power Density



Symbol

Test Conditions

Characteristic Values

(T_J= 25C Unless Otherwise Specified)

Min. Typ.

2.0

Max.

Applications

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250A

V_DS= V_GS, I_D= 250A

V_GS= 15V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

4.0

• Synchronous Buck Converters

• High Current Switching Power

Supplies

            200 nA

A

I_DSS

• Battery Powered Electric Motors

T_J= 150C

V_GS= 10V, I_D= 0.5 • I_D25, Notes 1,2

250 A

2.9 m

• Resonant-Mode Power Supplies

• Electronics Ballast Application

• Class D Audio Amplifiers

R_DS(on)

DS100729(5/16)

12 3 4 5 6

中文翻译

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