Datasheet > IXTP26P10T

IXTP26P10T

更新时间： 2024-09-14 14:56:51

品牌	Logo	应用领域
力特 - LITTELFUSE		开关驱动高压
页数	文件大小	规格书
7页	311K
描述
Trench P通道MOSFET非常适合“高压侧”开关应用，这些应用可采用简单的接地参考驱动电路，避免使用N通道MOSFET通常涉及的额外“高压侧”驱动电路。这让设计人员可以减少元件数量，从而简

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中文翻译

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数据手册

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IXTP26P10T 数据手册

TrenchP^TM

Power MOSFET

V_DSS= - 100V

I_D25= - 26A

IXTY26P10T

IXTA26P10T

IXTP26P10T

R_DS(on)



90m

P-Channel Enhancement Mode

Avalanche Rated

TO-252 (IXTY)

D (Tab)

TO-263 (IXTA)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

- 100

V_DGR

V_GSS

V_GSM

Continuous

Transient

15

25

TO-220 (IXTP)

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

- 26

- 80

D (Tab)

I_A

E_AS

T_C= 25C

- 26

300

P_D

T_C= 25C

150

G = Gate

= Drain

S = Source

Tab = Drain

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

C

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

Features

^International Standard Packages

^Avalanche Rated

M_d

Mounting Torque (TO-220)

1.13 / 10

Nm/lb.in

Weight

TO-252

TO-263

TO-220

0.35

2.50

3.00

^Extended FBSOA

^Fast Intrinsic Diode



Low R_DS(ON)and Q_G

Advantages



Symbol

Test Conditions

Characteristic Values

Min. Typ. Max.

Easy to Mount

Space Savings

High Power Density

(T_J= 25C, Unless Otherwise Specified)



BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= - 250A

V_DS= V_GS, I_D= - 250A

V_GS= 15V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

-100

- 2.5

- 4.5

Applications

50 nA



High-Side Switching

Push Pull Amplifiers

DC Choppers

Automatic Test Equipment

Current Regulators

Battery Charger Applications



I_DSS

-10 A

- 250 A



T_J= 125C



R_DS(on)

V_GS= -10V, I_D= 0.5 • I_D25, Note 1

90 m



DS100291B(8/17)

12 3 4 5 6 7

中文翻译

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